Abstract: Epitaxy of the cubic Mg_xZn_1-xO thin films on Si (111) was achieved by the reactive electron beam evaporation
for the first time. Energy dispersive x-ray detection (EDX) and x-ray diffraction (XRD) were employed to characterize the as-grown films. The
orientation of cubic Mg_xZn_1-xO films relies on the growth temperature and the highly (200) oriented Mg_xZn_1-xO films are
attainable only at the optimal growth temperature of about 200℃. Photoluminescence excitation (PLE) spectroscopic measurement demonstrates
that the optical absorption band edge of the cubic Mg_xZn_1-xO is at 4.20eV, which is 3.50eV lower than the band gap of MgO. Furthermore, XRD
measurements indicate the lattice mismatch between cubic Mg_xZn_1-xO and MgO is only 0.16%. The successful growth of high quality Mg_xZn_1-xO
renders the fabrication of cubic phase Mg_xZn_1-xO/MgO multiple quantum wells possible.

Key words: reactive e-beam evaporation, cubic Mg_XZn_1-xO film