Abstract: The SILAR method was applied to prepare cadmium sulfide thin films on a glass substrate at room temperature.
The growth rate and surface morphology of the films with cycle times were characterized. The effect of annealing on crystal structure and resistivity
of the films was studied. In addition, the growth mechanism of heterogeneous reaction of the thin film was discussed. The results show that
the film as-deposited is amorphous and compact, the growth rate is about 2nm/cycle and the size of the particles is increased from 60nm to 100nm
with the increase of the cycle times. The crystallinity is increased and the resistivity is decreased with the increase of annealing temperature
from RT to 673K.

Key words: CdS film, SILAR, preparation and characterization, growth mechanism