Abstract: Systematic investigation of preparation-parameter dependence of MgO films’ crystallinity during pulsed-laser depositon of MgO films was carried out. It is found that
MgO films’ crystallinity is mainly affected by substrate temperature and laser fluence, while the growth velocity of MgO films is dominated by
pulse frequency, substrate-target distance and laser fluence. By comparison of the influence of metallic Mg target and sintered MgO target on the films’
cystallinity, it also found that, via inserting a TiN seed layer, the crystalline quality of MgO films can be greatly improved. Finally, under
the optimal preparation-parameter conditions: T_S=873K, D_E=7J/cm², D_ST=70mm, F_L=5Hz, employing sintered MgO target and inserting a TiN seed layer, atomically smooth MgO
films grown with layer-by-layer mode can be successfully obtained.

Key words: pulsed-laser deposition, MgO films, Si substrate, RHEED