Journal of Inorganic Materials

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Recent Advances in Synthesis and Properties of Cubic Boron Nitride Films

ZHANG Xing-Wang, YOU Jing-Bi, CHEN Nuo-Fu   

  1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2006-06-22 Revised:2006-08-16 Published:2007-05-20 Online:2007-05-20

Abstract:

Cubic boron nitride (c-BN) attracts widespread interest as a promising material for many potential applications because of its unique physical and chemical properties. Since the 1980’s the research in c-BN thin films has been carried out, which reached its summit in the mid of 1990’s, then turned into a downward period. In the past few years, however, important progress was achieved in synthesis and properties of cubic boron nitride films, such as obtaining >1μm thick c-BN films, epitaxial growth of single crystalline c-BN films, and advances in mechanics properties and microstructures of the interlayer of c-BN films. The present article reviews the current status of the synthesis and properties of c-BN thin films.

Key words: cubic boron nitride (c-BN) films, heteroepitaxy, stress, adhesion

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