Journal of Inorganic Materials ›› 2023, Vol. 38 ›› Issue (11): 1371-1372.DOI: 10.15541/jim20230325
• SCI-TECH DEVELOPMENT • Previous Articles
XIONG Xixi1(), YANG Xianglong1(), CHEN Xiufang1(), LI Xiaomeng1, XIE Xuejian1, HU Guojie1, PENG Yan1, YU Guojian2, HU Xiaobo1, WANG Yaohao2, XU Xiangang1
Received:
2023-07-18
Revised:
2023-08-04
Published:
2023-08-21
Online:
2023-08-21
Contact:
YANG Xianglong, associate professor. E-mail: yangxl2016@sdu.edu.cn;About author:
XIONG Xixi (1994-), male, PhD candidate. E-mail: xiongxixi@summitcrystal.com
Supported by:
CLC Number:
XIONG Xixi, YANG Xianglong, CHEN Xiufang, LI Xiaomeng, XIE Xuejian, HU Guojie, PENG Yan, YU Guojian, HU Xiaobo, WANG Yaohao, XU Xiangang. Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density[J]. Journal of Inorganic Materials, 2023, 38(11): 1371-1372.
Fig. 1 8-inch conductive 4H-SiC single crystal substrate and corresponding BPD density distribution (a) 8-inch conductive 4H-SiC single crystal substrate; (b) BPD density mapping
Fig. 2 Distribution of TSD density with 0.55 cm-2 and statistical distribution of TSD characteristic etch pits (a) TSD density mapping; (b) The number of TSDs characteristic etch pits with different sizes
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