Journal of Inorganic Materials ›› 2023, Vol. 38 ›› Issue (4): 406-412.DOI: 10.15541/jim20220675
• Topical Section on Neuromorphic Materials and Devices (Contributing Editor: WAN Qing) • Previous Articles Next Articles
QIU Haiyang(), MIAO Guangtan, LI Hui, LUAN Qi, LIU Guoxia, SHAN Fukai(
)
Received:
2022-11-14
Revised:
2022-12-19
Published:
2023-04-20
Online:
2022-12-28
Contact:
SHAN Fukai, professor. E-mail: fkshan@qdu.edu.cnAbout author:
QIU Haiyang (1997-), male, Master candidate. E-mail: 17853260598@163.com
Supported by:
CLC Number:
QIU Haiyang, MIAO Guangtan, LI Hui, LUAN Qi, LIU Guoxia, SHAN Fukai. Effect of Plasma Treatment on the Long-term Plasticity of Synaptic Transistor[J]. Journal of Inorganic Materials, 2023, 38(4): 406-412.
Fig. 2 Schematic illustration and properties of synaptic transistor (a) Schematic illustration of a synapse; (b) Device structure; (c) Frequency-dependent characteristics of chitosan electrolyte with inset showing device configuration for C-F measurement; (d) Transfer curves of untreated and O2 plasma-treated (W/O2 plasma) device; (e) Output curves of untreated device; (f) Output curves of O2 plasma treated device
Fig. 3 STP (a) and LTP (b) characteristics of untreated and O2 plasma-treated (W/O2 plasma) device, (c) paired-pulse facilitation curves for device with and without O2 plasma treatment and (d) PPF index as a function of pulse interval Colorful figures are available on website
Fig. 4 Potentiation/depression characteristics of untreated (a) and O2 plasma-treated (c) devices, repeatability, and stability of P-D curves after 50 cycles of untreated (b) and O2 plasma-treated (d) devices
Fig. 5 Artificial neural network, synaptic weight cross array of hardware and supervised learning outcome tests (a) Diagram of the ANN for pattern recognition; (b) Schematic diagram showing a hardware implemented synaptic weight cross-bar array with EGSTs with evolution classification accuracy as a function of training epochs for small digits (c), large digits (d), and file types datasets (e), respectively Colorful figures are available on website
[1] | SANGWAN V K, HERSAM M C. Neuromorphic nanoelectronic materials. Nature Nanotechnology, 2020, 15: 517. |
[2] |
MURAT O, NICOLAS E, WANG B M, et al. Nanosecond protonic programmable resistors for analog deep learning. Science, 2022, 377(6605):539.
DOI PMID |
[3] |
HO V M, LEE J, MARTIN K C. The cell biology of synaptic plasticity. Science, 2011, 334(6056):623.
DOI PMID |
[4] | ZHU Y X, WAN Q, SHAN F K, et al. Solution-processed electrolyte gated In2O3 flexible synaptic transistors for brain-inspired neuromorphic applications. ACS Applied Materials & Interfaces, 2020, 12(1):1061. |
[5] |
ZHU Y X, LIU G X, SHAN F K, et al. Electrospun ZnSnO nanofibers for neuromorphic transistors with ultralow energy consumption. IEEE Electron Device Letters, 2019, 40(11):1776.
DOI URL |
[6] | JIN C X, SUN J, YANG J L, et al. Artificial vision adaption mimicked by an optoelectrical In2O3 transistor array. Nano Letters, 2022, 22: 3372. |
[7] |
KWON S M, KIM Y H, PARK S K, et al. Environment-adaptable artificial visual perception behaviors using a light-adjustable optoelectronic neuromorphic device array. Advanced Materials, 2019, 31(52):1906433.
DOI URL |
[8] |
WANG J X, CHEN Y, SUN J, et al. Deep-ultraviolet-triggered neuromorphic functions in In-Zn-O phototransistors. Applied Physics Letters, 2018, 113(15):151101.
DOI URL |
[9] |
JIN C X, LIU W R, SUN J, et al. Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory. Applied Physics Letters, 2022, 120(23):233701.
DOI URL |
[10] |
YANG J T, GE C, JIN K J, et al. Artificial synapses emulated by an electrolyte-gated tungsten-oxide transistor. Advanced Materials, 2018, 30(34):1801548.
DOI URL |
[11] |
QIU H Y, HAO D D, SHAN F K, et al. Transparent and biocompatible In2O3artificial synapses with lactose-citric acid electrolyte for neuromorphic computing. Applied Physics Letters, 2022, 121(18):183301.
DOI URL |
[12] |
YU S M. Neuro-inspired computing with emerging nonvolatile memory. Proceedings of the IEEE, 2018, 106(2):260.
DOI URL |
[13] |
NIKAM R D, KWAK M, LEE J, et al. Controlled ionic tunneling in lithium nanoionic synaptic transistor through atomically thin graphene layer for neuromorphic computing. Advanced Electronic Materials, 2019, 6(2):1901100.
DOI URL |
[14] |
SUN J, OH S, PARK J H, et al. Optoelectronic synapse based on IGZO-alkylated graphene oxide hybrid structure. Advanced Functional Materials, 2018, 28(47):1804397.
DOI URL |
[15] |
LEE H, JIN M, NA H J, et al. Implementation of synaptic device using ultraviolet ozone. Advanced Functional Materials, 2021, 32(15):2110591.
DOI URL |
[16] |
YANG C S, SHANG D S, LIU N, et al. All-solid-state synaptic transistor with ultralow conductance for neuromorphic computing. Advanced Functional Materials, 2018, 28(42):1804170.
DOI URL |
[17] |
WANG J J, DING Y N, SHAN F K, et al. Performance enhancement of field-effect transistors based on In2O3 nanofiber networks by plasma treatment. IEEE Electron Device Letters, 2021, 42(2):176.
DOI URL |
[18] |
FENG G D, JIANG J, WAN Q, et al. A sub-10nm vertical organic/ inorganic hybrid transistor for pain-perceptual and sensitization-regulated nociceptor emulation. Advanced Materials, 2019, 32(6):1906171.
DOI URL |
[19] |
GILLUND G, SHIFFRIN R M. A retrieval model for both recognition and recall. Psychological Review, 1984, 91(1):1.
PMID |
[20] |
LI H, DING Y N, SHAN F K, et al. Flexible and compatible synaptic transistor based on electrospun In2O3 nanofibers. IEEE Transactions on Electron Devices, 2022, 69(9):5363.
DOI URL |
[21] |
NIE S, HE Y L, WAN Q, et al. Low-voltage oxide-based synaptic transistors for spiking humidity detection. IEEE Electron Device Letters, 2019, 40(3):459.
DOI URL |
[22] |
ZHU Y X, PENG B C, WAN Q, et al. IGZO nanofiber photoelectric neuromorphic transistors with indium ratio tuned synaptic plasticity. Applied Physics Letters, 2022, 121(13):133502.
DOI URL |
[23] |
LIU Y H, ZHU L Q, WAN Q, et al. Freestanding artificial synapses based on laterally proton-coupled transistors on chitosan membranes. Advanced Materials, 2015, 27(37):5599.
DOI URL |
[24] |
WAN C J, ZHU L Q, WAN Q, et al. Laterally coupled synaptic transistors gated by proton conducting sodium alginate films. IEEE Electron Device Letters, 2014, 35(6):672.
DOI URL |
[25] |
KE S, FU C Y, WAN Q, et al. BCM learning rules emulated by a-IGZO-based photoelectronic neuromorphic transistors. IEEE Transactions on Electron Devices, 2022, 69(8):4646.
DOI URL |
[26] | QIN W, KANG B H, KIM H J. Flexible artificial synapses with a biocompatible maltose-ascorbic acid electrolyte gate for neuromorphic computing. ACS Applied Materials & Interfaces, 2021, 13(29):34597. |
[27] |
ZHU Y X, MAO H W, WAN Q, et al. Photoelectric synapse based on InGaZnO nanofibers for high precision neuromorphic computing. IEEE Electron Device Letters, 2022, 43(4):651.
DOI URL |
[28] |
CHEN C S, HE Y L, WAN Q, et al. A photoelectric spiking neuron for visual depth perception. Advanced Materials, 2022, 34(20):2201895.
DOI URL |
[29] |
HE Y L, NIE S, WAN Q, et al. Indium-gallium-zinc-oxide Schottky synaptic transistors for silent synapse conversion emulation. IEEE Electron Device Letters, 2019, 40(1):139.
DOI URL |
[30] | QIAN C, OH S, CHO J H, et al. Solar-stimulated optoelectronic synapse based on organic heterojunction with linearly potentiated synaptic weight for neuromorphic computing. Nano Energy, 2019, 66: 104095. |
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