Solution-prepared AgBi2I7 Thin Films and Their Photodetecting Properties

doi:10.15541/jim20220569

Abstract

Abstract:

AgBi₂I₇ thin film is one of the important candidates for constructing heterojunction ultraviolet photodetectors, due to their great optoelectronic properties and environmental stability. In this study, AgBi₂I₇ thin films were prepared by solution method and their photodetecting properties were investigated. By optimizing technological parameters such as concentration of the precursor solution and type of solvent (n-butylamine and DMSO), their photodetecting performance were investigated. AgBi₂I₇ thin films were fabricated on wide-bandgap GaN by optimal scheme to construct an AgBi₂I₇/GaN heterojunction. The heterojunction has a great selective detection of UVA-ray of which full width at half maximum is about 30 nm. Under 3 V bias and 350 nm UV irradiation, the On/Off ratio of the device exceeds 5 orders of magnitude, achieving a high responsivity of 27.51 A/W and a high detection rate of 1.53×10¹⁴ Jones. Therefore, the present research indicates that AgBi₂I₇thin films prepared by solution method are promising to be applied to construct high-performance heterojunction ultraviolet photodetectors.

Key words: AgBi₂I₇ thin film, solution method, heterojunction, ultraviolet photodetection

CLC Number:

TQ174

HU Ying, LI Ziqing, FANG Xiaosheng. Solution-prepared AgBi₂I₇ Thin Films and Their Photodetecting Properties[J]. Journal of Inorganic Materials, 2023, 38(9): 1055-1061.

Figures/Tables 12

Fig. 1 Experimental procedure of preparing AgBi2I7 thin film by DMSO solvent

Fig. 2 (a) Crystal structure of AgBi2I7 and (b) six-coordinated silver-iodide octahedron sites

Fig. 3 XRD patterns of (a) ABI-Bx (x=10, 14, 18) and (b) ABI- Dy (y=14, 16, 18)

Fig. 4 SEM images of (a) ABI-B14 and (b) ABI-D16, and (c) UV-Vis absorption spectra of films from different precursors Colorful figures are available on website

Fig. 5 I-t and I-V curves of AgBi2I7 thin films (a, b) I-t curves of (a) ABI-Bx (x=10, 14, 18) and (b) ABI-Dy(y=14, 16, 18) at 1 V; (c, d) I-V curves of (c) ABI-B14 and (d) ABI-D16 Colorful figures are available on website

Table 1 Photocurrents and dark currents of ABI-Bx (x=10, 14, 18) and ABI-Dy (y=14, 16, 18)

Sample	Photocurrent/nA		Dark current/nA	On/Off ratio
ABI-B10	0.56		0.49	1.14
ABI-B14	2.60		1.88	1.38
ABI-B18	0.98		0.81	1.21
ABI-D14		0.19	0.18	1.06
ABI-D16		0.32	0.27	1.20
ABI-D18		0.35	0.30	1.20

Fig. 6 Device structure and photoelectric properties of AgBi2I7/GaN heterojunctions (a) Device structure; (b) Energy diagram; (c) I-V curves; (d) I-t curves to 350 nm UV light; (e) Responsivity and detectivity; (f) Performance comparison of lead-free photodetectors Colorful figures are available on website

Fig. S1 Optical micrographs of AgBi2I7 thin films (a) ABI-B10; (b) ABI-B14; (c) ABI-B18; (d) ABI-D14; (e) ABI-D16; (f) ABI-D18

Fig. S2 SEM images of AgBi2I7 thin films (a) ABI-D14; (b) ABI-D18; (c) ABI-B10; (d) ABI-B18

Fig. S3 Tauc plots of (a) ABI-B14 and (b) ABI-D16

Fig. S4 EQE of AgBi2I7/GaN heterojunctions

Table S1 Summary of optoelectronic performances of typical lead-free perovskite photodetectors

Photodetector	Light/nm	On/Off ratio	Responsivity/(A·W^-1)	Detectivity /Jones	Ref.
Ag-AgBi₂I₇-GaN-Ag	350	8.7×10⁵	27.51	1.53×10¹⁴	This work
Graphene-Cs₃Bi₂I₉-p-Si	650	>10²	23.6	1.75×10¹³	[1]
In-GaN-Cs₂AgBiBr₆-NiO-Au	365	1.16×10³	0.33	3.28×10¹¹	[2]
ITO-SnO₂-CsBi₃I₁₀-Au	650	2.33×10⁵	0.2	1.8×10¹³	[3]
Graphene-CsSnI₃-SnO₂-ITO	405	10⁴	0.237	1.18×10¹²	[4]
FTO-SnO₂-Ag₂BiI₅-carbon	473	6.25×10⁵	0.3	5.3×10¹²	[5]
ITO-SnO₂-Cs₃Bi₂I₉-PTAA-Au-ITO	405	5.7×10³	0.052	>10¹²	[6]
Au-CsCu₂I₃/GaN-In	325	1.1×10⁴	0.37	1.83×10¹³	[7]
Au-Cs₃Sb₂I₉-Au	450	5.5×10³	0.446	1.27 × 10¹¹	[8]

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Solution-prepared AgBi₂I₇ Thin Films and Their Photodetecting Properties

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