Journal of Inorganic Materials ›› 2022, Vol. 37 ›› Issue (9): 991-1000.DOI: 10.15541/jim20210638
• RESEARCH ARTICLE • Previous Articles Next Articles
WANG Hongning1(), HUANG Li1, QING Jiang3, MA Tengzhou3(), HUANG Weiqiu2, CHEN Ruoyu1()
Received:
2021-10-18
Revised:
2022-02-18
Published:
2022-09-20
Online:
2022-03-15
Contact:
CHEN Ruoyu, professor. E-mail: chry@cczu.edu.cn;About author:
WANG Hongning (1980-), female, PhD candidate. E-mail: 444873772@qq.com
Supported by:
CLC Number:
WANG Hongning, HUANG Li, QING Jiang, MA Tengzhou, HUANG Weiqiu, CHEN Ruoyu. Mesoporous Organic-inorganic Hybrid Siliceous Hollow Spheres: Synthesis and VOCs Adsorption[J]. Journal of Inorganic Materials, 2022, 37(9): 991-1000.
Fig. 1 TEM images of MOSs with different initial BTSE/ (BTSE+TEOS) molar ratios (a) MOS-0; (b) MOS-5%; (c) MOS-7.5%; (d) MOS-10%; (e) MOS-12.5%; (f) MOS-15%
Fig. 2 N2 sorption isotherms (a) and pore size distributions (b) of MOSs with different initial BTSE/(BTSE+TEOS) molar ratios (A) MOS-0; (B) MOS-5%; (C) MOS-7.5%; (D) MOS-10%; (E)MOS-12.5%; (F) MOS-15%. In (a), the Y-axis values of (B-F) are 300, 600, 800, 1000, and 1300 m2·g-1, respectively. In (b), the Y-axis values of (B-F) are 0.1, 0.4, 0.8, 1.0, 1.2, and 1.4 cm3·g-1, respectively
Sample | SBET/ (m2·g-1) | Sm/ (m2·g-1) | Vt/ (cm3·g-1) | Vm/ (cm3·g-1) | Pore size/ nm |
---|---|---|---|---|---|
MOS-0 | 591 | 0 | 0.721 | 0 | 2.5 |
MOS-5% | 612 | 0 | 0.722 | 0 | 2.7 |
MOS-7.5% | 612 | 0 | 0.776 | 0 | 2.8 |
MOS-10% | 696 | 0 | 0.887 | 0 | 2.6 |
MOS-12.5% | 655 | 0 | 0.873 | 0 | 2.7 |
MOS-15% | 648 | 0 | 0.857 | 0 | 2.7 |
Table 1 Structural parameters of MOSs with different initial BTSE/(BTSE+TEOS) molar ratios
Sample | SBET/ (m2·g-1) | Sm/ (m2·g-1) | Vt/ (cm3·g-1) | Vm/ (cm3·g-1) | Pore size/ nm |
---|---|---|---|---|---|
MOS-0 | 591 | 0 | 0.721 | 0 | 2.5 |
MOS-5% | 612 | 0 | 0.722 | 0 | 2.7 |
MOS-7.5% | 612 | 0 | 0.776 | 0 | 2.8 |
MOS-10% | 696 | 0 | 0.887 | 0 | 2.6 |
MOS-12.5% | 655 | 0 | 0.873 | 0 | 2.7 |
MOS-15% | 648 | 0 | 0.857 | 0 | 2.7 |
Fig. 3 FT-IR spectra of MOSs with different initial BTSE/ (BTSE+TEOS) molar ratios (A) MOS-0; (B) MOS-5%; (C) MOS-7.5%; (D) MOS-10%; (E) MOS- 12.5%; (F) MOS-15%; (G) CTAB
Fig. 4 XRD patterns of MOSs with different initial BTSE/ (BTSE+TEOS) molar ratios (A) MOS-0; (B) MOS-5%; (C) MOS-7.5%; (D) MOS-10%; (E) MOS- 12.5%; (F) MOS-15%
Fig. 5 TGA curves of MOSs with different initial BTSE/ (BTSE+TEOS) molar ratios (A) MOS-0; (B) MOS-5%; (C) MOS-7.5%; (D) MOS-10%; (E) MOS- 12.5%; (F) MOS-15%;
Fig. 6 Histograms of static VOCs (n-hexane, toluene and 92# gasoline) adsorption capacities (a, c, e) and desorption efficiencies (b, d, f) of different samples (A) MOS-0; (B) MOS-5%; (C) MOS-7.5%; (D) MOS-10%; (E) MOS-12.5%; (F) MOS-15%; (G) SG; (H) AC
Fig. 6 Histograms of static VOCs (n-hexane, toluene and 92# gasoline) adsorption capacities (a, c, e) and desorption efficiencies (b, d, f) of different samples (A) MOS-0; (B) MOS-5%; (C) MOS-7.5%; (D) MOS-10%; (E) MOS-12.5%; (F) MOS-15%; (G) SG; (H) AC
Fig. 8 Breakthrough curves for n-hexane of SG (■), AC (●) and MOS-10% (▲) under dry condition for the (a) first time and (b) fifth time and comparison of the qe (c) and desorption efficiency (d) of 5 times
Fig. 10 Yoon and Nelson model fitting for 5 times adsorption of n-hexane (a) and toluene (b) on MOS-10% under dry condition Colorful figures are available on website
Fig. 12 Simultaneous breakthrough adsorption n-hexane (a) and toluene (b) on MOS-10% under dry condition, comparison of the equilibrium adsorption capacities (c) and desorption efficiency (d) for 5 times, respectively
Sample | SBET/(m2 ·g-1) | Sm/(m2 ·g-1) | Vt/(cm3 ·g-1) | Vm/(cm3 ·g-1) | Pore size/nm |
---|---|---|---|---|---|
AC | 1451 | 973 | 1.03 | 0.48 | 5.6 |
SG | 430 | 15 | 0.710 | 0.010 | 6.9 |
Table S1 Structural parameters of AC and SG
Sample | SBET/(m2 ·g-1) | Sm/(m2 ·g-1) | Vt/(cm3 ·g-1) | Vm/(cm3 ·g-1) | Pore size/nm |
---|---|---|---|---|---|
AC | 1451 | 973 | 1.03 | 0.48 | 5.6 |
SG | 430 | 15 | 0.710 | 0.010 | 6.9 |
Sample | First event | Second event | Residual mass /% | ||
---|---|---|---|---|---|
(Tons-Tf )/℃ | Δm/% | (Tons-Tf )/℃ | Δm/% | ||
MOS-0 | 30-200 | 1.7 | 200-900 | 8.1 | 90.2 |
MOS-5% | 30-200 | 1.7 | 200-900 | 7.6 | 90.7 |
MOS-7.5% | 30-200 | 1.9 | 200-900 | 12.6 | 85.5 |
MOS-10% | 30-200 | 5.3 | 200-900 | 20.1 | 74.6 |
MOS-12.5% | 30-200 | 1.5 | 200-900 | 7.9 | 90.6 |
MOS-15% | 30-200 | 1.4 | 200-900 | 9.0 | 89.6 |
Table S2 TGA results of different MOSs under nitrogen atmosphere in the range of 30-900 ℃ (10 ℃/min)
Sample | First event | Second event | Residual mass /% | ||
---|---|---|---|---|---|
(Tons-Tf )/℃ | Δm/% | (Tons-Tf )/℃ | Δm/% | ||
MOS-0 | 30-200 | 1.7 | 200-900 | 8.1 | 90.2 |
MOS-5% | 30-200 | 1.7 | 200-900 | 7.6 | 90.7 |
MOS-7.5% | 30-200 | 1.9 | 200-900 | 12.6 | 85.5 |
MOS-10% | 30-200 | 5.3 | 200-900 | 20.1 | 74.6 |
MOS-12.5% | 30-200 | 1.5 | 200-900 | 7.9 | 90.6 |
MOS-15% | 30-200 | 1.4 | 200-900 | 9.0 | 89.6 |
Sample | Adsorption | Desorption | -OH/(×1020, g-1) | ||
---|---|---|---|---|---|
Average/(g·g-1) | STDEa/% | Average/% | STDEa/% | ||
MOS-0% | 0.903 | 0.0168 | 99.4 | 0.205 | 3.11 |
MOS-5% | 0.667 | 0.0177 | 99.3 | 0.329 | 2.35 |
MOS-7.5% | 0.656 | 0.0165 | 99.4 | 0.283 | 2.31 |
MOS-10% | 0.630 | 0.0137 | 99.4 | 0.134 | 2.23 |
MOS-12.5% | 0.697 | 0.0156 | 99.4 | 0.230 | 2.44 |
MOS-15% | 0.697 | 0.0136 | 99.4 | 0.365 | 2.45 |
SG | 0.433 | 0.0984 | 97.7 | 0.867 | 1.72 |
AC | 0.482 | 0.0305 | 93.5 | 11.1 | 1.77 |
Table S3 Water vapor adsorption capacities, desorption efficiencies and the densities of surface hydroxyl groups of different samples
Sample | Adsorption | Desorption | -OH/(×1020, g-1) | ||
---|---|---|---|---|---|
Average/(g·g-1) | STDEa/% | Average/% | STDEa/% | ||
MOS-0% | 0.903 | 0.0168 | 99.4 | 0.205 | 3.11 |
MOS-5% | 0.667 | 0.0177 | 99.3 | 0.329 | 2.35 |
MOS-7.5% | 0.656 | 0.0165 | 99.4 | 0.283 | 2.31 |
MOS-10% | 0.630 | 0.0137 | 99.4 | 0.134 | 2.23 |
MOS-12.5% | 0.697 | 0.0156 | 99.4 | 0.230 | 2.44 |
MOS-15% | 0.697 | 0.0136 | 99.4 | 0.365 | 2.45 |
SG | 0.433 | 0.0984 | 97.7 | 0.867 | 1.72 |
AC | 0.482 | 0.0305 | 93.5 | 11.1 | 1.77 |
Sample | tb/min | te/min | qe/(g·g-1) | Desorption efficiency/% |
---|---|---|---|---|
MOS-10%-1st | 50 | 104 | 1.23 | 99.8 |
MOS-10%-2nd | 48 | 102 | 1.20 | 99.5 |
MOS-10%-3rd | 46 | 100 | 1.19 | 99.4 |
MOS-10%-4th | 48 | 102 | 1.22 | 99.6 |
MOS-10%-5th | 48 | 102 | 1.21 | 99.2 |
SG-1st | 16 | 72 | 0.361 | 98.9 |
SG-2nd | 14 | 70 | 0.321 | 97.5 |
SG-3rd | 14 | 70 | 0.334 | 98.7 |
SG-4th | 12 | 72 | 0.321 | 98.6 |
SG-5th | 10 | 72 | 0.343 | 97.6 |
AC-1st | 38 | 50 | 0.574 | 73.7 |
AC-2nd | 28 | 44 | 0.465 | 83.6 |
AC-3rd | 28 | 42 | 0.461 | 90.9 |
AC-4th | 26 | 44 | 0.452 | 98.6 |
AC-5th | 24 | 42 | 0.458 | 97.2 |
Table S4 Comparison of dynamic n-hexane adsorption parameters on different samples for 5 times under dry condition
Sample | tb/min | te/min | qe/(g·g-1) | Desorption efficiency/% |
---|---|---|---|---|
MOS-10%-1st | 50 | 104 | 1.23 | 99.8 |
MOS-10%-2nd | 48 | 102 | 1.20 | 99.5 |
MOS-10%-3rd | 46 | 100 | 1.19 | 99.4 |
MOS-10%-4th | 48 | 102 | 1.22 | 99.6 |
MOS-10%-5th | 48 | 102 | 1.21 | 99.2 |
SG-1st | 16 | 72 | 0.361 | 98.9 |
SG-2nd | 14 | 70 | 0.321 | 97.5 |
SG-3rd | 14 | 70 | 0.334 | 98.7 |
SG-4th | 12 | 72 | 0.321 | 98.6 |
SG-5th | 10 | 72 | 0.343 | 97.6 |
AC-1st | 38 | 50 | 0.574 | 73.7 |
AC-2nd | 28 | 44 | 0.465 | 83.6 |
AC-3rd | 28 | 42 | 0.461 | 90.9 |
AC-4th | 26 | 44 | 0.452 | 98.6 |
AC-5th | 24 | 42 | 0.458 | 97.2 |
tb/min | te/min | qe/(g·g-1) | Desorption efficiency/% | |
---|---|---|---|---|
1st | 48 | 100 | 1.21 | 99.7 |
2nd | 46 | 98 | 1.18 | 99.5 |
3rd | 44 | 96 | 1.17 | 99.3 |
4th | 46 | 98 | 1.18 | 99.4 |
5th | 46 | 98 | 1.18 | 99.1 |
Table S5 Comparison of dynamic toluene adsorption parameters on MOS-10% for 5 times under dry condition
tb/min | te/min | qe/(g·g-1) | Desorption efficiency/% | |
---|---|---|---|---|
1st | 48 | 100 | 1.21 | 99.7 |
2nd | 46 | 98 | 1.18 | 99.5 |
3rd | 44 | 96 | 1.17 | 99.3 |
4th | 46 | 98 | 1.18 | 99.4 |
5th | 46 | 98 | 1.18 | 99.1 |
Sample | SBET/(m2·g-1) | Sm/(m2·g-1) | Vt/(cm3·g-1) | Vm/(cm3·g-1) | Pore size/nm |
---|---|---|---|---|---|
MOS-10% | 696 | 0 | 0.887 | 0 | 2.64 |
MOS-10%-5th | 638 | 0 | 0.830 | 0 | 2.64 |
AC | 1654 | 652 | 1.06 | 0.48 | 5.58 |
AC-5th | 1310 | 395 | 0.880 | 0.38 | 5.51 |
Table S6 Structural parameters of MOS-10% and AC before and after 5 times dynamic n-hexane adsorption under dry condition
Sample | SBET/(m2·g-1) | Sm/(m2·g-1) | Vt/(cm3·g-1) | Vm/(cm3·g-1) | Pore size/nm |
---|---|---|---|---|---|
MOS-10% | 696 | 0 | 0.887 | 0 | 2.64 |
MOS-10%-5th | 638 | 0 | 0.830 | 0 | 2.64 |
AC | 1654 | 652 | 1.06 | 0.48 | 5.58 |
AC-5th | 1310 | 395 | 0.880 | 0.38 | 5.51 |
n-hexane | Toluene | |||||
---|---|---|---|---|---|---|
τ0/min | K׳/min-1 | R2 | τ0/min | K׳/min-1 | R2 | |
1st | 63.1 | 0.150 | 0.984 | 58.4 | 0.0948 | 0.979 |
2nd | 61.3 | 0.172 | 0.990 | 52.8 | 0.105 | 0.977 |
3rd | 56.7 | 0.174 | 0.979 | 51.5 | 0.114 | 0.987 |
4th | 57.1 | 0.169 | 0.986 | 54.1 | 0.111 | 0.978 |
5th | 58.9 | 0.165 | 0.984 | 54.2 | 0.110 | 0.982 |
Table S7 Simulation parameters of 5 times dynamic n-hexane and toluene adsorption on MOS-10% under dry condition
n-hexane | Toluene | |||||
---|---|---|---|---|---|---|
τ0/min | K׳/min-1 | R2 | τ0/min | K׳/min-1 | R2 | |
1st | 63.1 | 0.150 | 0.984 | 58.4 | 0.0948 | 0.979 |
2nd | 61.3 | 0.172 | 0.990 | 52.8 | 0.105 | 0.977 |
3rd | 56.7 | 0.174 | 0.979 | 51.5 | 0.114 | 0.987 |
4th | 57.1 | 0.169 | 0.986 | 54.1 | 0.111 | 0.978 |
5th | 58.9 | 0.165 | 0.984 | 54.2 | 0.110 | 0.982 |
tb/min | te/min | qe,hexane /g·g-1 | qe,t /g·g-1 adsorbent | qe,water /g·g-1 adsorbent | qe,hexane/ qe,water | Desorption efficiency /% | |
---|---|---|---|---|---|---|---|
1st | 46 | 100 | 1.23 | 1.23 | 0.006 | 205 | 99.6 |
2nd | 44 | 98 | 1.20 | 1.20 | 0.003 | 400 | 99.7 |
3rd | 42 | 96 | 1.19 | 1.19 | 0.006 | 199 | 99.6 |
4th | 42 | 96 | 1.21 | 1.21 | 0.003 | 404 | 99.4 |
5th | 44 | 98 | 1.17 | 1.20 | 0.008 | 147 | 99.2 |
Table S8 Dynamic n-hexane adsorption parameters on MOS-10% for 5 times under 95% RH
tb/min | te/min | qe,hexane /g·g-1 | qe,t /g·g-1 adsorbent | qe,water /g·g-1 adsorbent | qe,hexane/ qe,water | Desorption efficiency /% | |
---|---|---|---|---|---|---|---|
1st | 46 | 100 | 1.23 | 1.23 | 0.006 | 205 | 99.6 |
2nd | 44 | 98 | 1.20 | 1.20 | 0.003 | 400 | 99.7 |
3rd | 42 | 96 | 1.19 | 1.19 | 0.006 | 199 | 99.6 |
4th | 42 | 96 | 1.21 | 1.21 | 0.003 | 404 | 99.4 |
5th | 44 | 98 | 1.17 | 1.20 | 0.008 | 147 | 99.2 |
Dynamic adsorption capacity, qe /(g·g-1) | |||||
---|---|---|---|---|---|
Single component | Bi-component | ||||
n-hexane | Toluene | n-hexane | Toluene | Total VOCs | |
1st | 1.23 | 1.21 | 0.642 | 0.569 | 1.21 |
2nd | 1.20 | 1.18 | 0.631 | 0.547 | 1.18 |
3rd | 1.19 | 1.17 | 0.613 | 0.532 | 1.15 |
4th | 1.22 | 1.18 | 0.607 | 0.550 | 1.16 |
5th | 1.21 | 1.18 | 0.628 | 0.547 | 1.18 |
Table S9 Comparison of simultaneous adsorption n-hexane and toluene parameters on MOS-10% for 5 times under dry condition
Dynamic adsorption capacity, qe /(g·g-1) | |||||
---|---|---|---|---|---|
Single component | Bi-component | ||||
n-hexane | Toluene | n-hexane | Toluene | Total VOCs | |
1st | 1.23 | 1.21 | 0.642 | 0.569 | 1.21 |
2nd | 1.20 | 1.18 | 0.631 | 0.547 | 1.18 |
3rd | 1.19 | 1.17 | 0.613 | 0.532 | 1.15 |
4th | 1.22 | 1.18 | 0.607 | 0.550 | 1.16 |
5th | 1.21 | 1.18 | 0.628 | 0.547 | 1.18 |
Fig. S2 Relationship between VOCs adsorption capacities and structure parameters of different samples (A) MOS-0; (B) MOS-5%; (C) MOS-7.5%; (D) MOS-10%; (E) MOS- 12.5%; (F) MOS-15%; (G) SG; (H) AC
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