Journal of Inorganic Materials ›› 2022, Vol. 37 ›› Issue (6): 596-602.DOI: 10.15541/jim20210437

Special Issue: 【信息功能】电介质材料

• RESEARCH ARTICLE • Previous Articles     Next Articles

Columnar Nanograined BaTiO3 Ferroelectric Thin Films Integrated on Si with a Sizable Dielectric Tunability

ZHAO Yuyao1(), OUYANG Jun1,2()   

  1. 1. Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials, School of Materials Science and Engineering, Shandong University, Jinan 250061, China
    2. School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
  • Received:2021-07-13 Revised:2021-08-25 Published:2022-06-20 Online:2021-08-20
  • Contact: OUYANG Jun, male, professor. E-mail: ouyangjun@qlu.edu.cn
  • About author:ZHAO Yuyao (1994–), male, PhD candidate. E-mail: zhaoyuyao920606@163.com
  • Supported by:
    National Natural Science Foundation of China(51772175);National Natural Science Foundation of China(11672036);Jinan “New Universities” 20 Project(2021GXRC055);Jinan “New Universities” 20 Project(Science and Technology Bureau of Jinan)

Abstract:

BaTiO3 has a wide range of applications in microelectromechanical systems and integrated circuits due to its excellent dielectric, ferroelectric, piezoelectric, and pyroelectric properties. For the applied research and device applications of BaTiO3 films, reducing its deposition temperature to be compatible with the CMOS-Si technology is an important Challenge. Here, with the help of a LaNiO3 buffer layer which has a closely-matched lattice with BaTiO3, (001)-textured BaTiO3 films were sputter-deposited at 450 ℃ on single crystalline Si(100) substrates, which consisting of well-cryotallized, evenly-distributed columnar nanograins with an average grain size of 27 nm. Our result showed that this deposition temperature can maintain the columnar nanograin structure with a relatively large grain size, leading to a good ferroelectric performance. In addition, a small residual strain on Si was also helpful to improve its ferroelectric and dielectric properties. The remnant polarization and saturated polarization of these BaTiO3 films reached 7 and 43 μC·cm-2, respectively, while leakage current densities were as low as 10-5 A·cm-2 at an applied electric field of 0.8 MV·cm-1. These BaTiO3 films also displayed excellent frequency stability with a low dielectric loss in which relative dielectric constant measured to be ~155 at 1 kHz, slightly being reduced to ~145 after increasing the frequency to 1 MHz. Meanwhile, the dielectric loss slightly increased from 0.01 at 1 kHz to 0.03 at 1 MHz. Lastly, through capacitance-voltage (C-V) tests, these films exhibited a large dielectric tunability of~51% and a figure of merit (FOM) of ~17 (@1 MHz). These films have a good potential for applications in tunable dielectrics.

Key words: silicon, BaTiO3, ferroelectric film, columnar nanograins, dielectric tunability, figure of merit

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