Journal of Inorganic Materials ›› 2022, Vol. 37 ›› Issue (5): 561-566.DOI: 10.15541/jim20210271

Special Issue: 【信息功能】电介质材料

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Preparation of Epitaxial Metallic LaNiO3 Thin Film by Polymer Assisted Deposition

YANG Zhu1,2(), GUO Shaobo1(), CAI Henghui1,2, DONG Xianlin1,2,3, WANG Genshui1,2,3()   

  1. 1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
    3. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2021-04-26 Revised:2021-05-23 Published:2022-05-20 Online:2021-07-20
  • Contact: ANG Genshui, professor. E-mail: genshuiwang@mail.sic.ac.cn; GUO Shaobo, senior engineer. E-mail: guoshaobo@mail.sic.ac.cn
  • About author:YANG Zhu (1996–), male, Master candidate. E-mail: yangzhu@student.sic.ac.cn
  • Supported by:
    National Natural Science Foundation of China(11774366);International Partnership Program of Chinese Academy of Sciences(GJHZ1821)

Abstract:

LaNiO3 (LNO), as a promising material in ferroelectric super lattices, super conductive heterostructures and catalysts has recently attracted great interest. Herein, a facile and low-cost polymer assisted deposition (PAD) method is established to prepare epitaxial LNO thin films on (001) orientated SrTiO3 (STO) with excellent conductivity. Various structural and electrical characterizations of the film were investigated. The film has good crystallinity with a full-width at half-maximum value of 0.38° from the rocking curve for the (002) reflection. High resolution XRD φ-scans further confirmed the heteroepitaxial growth of LNO film on STO substrate. There are four peaks separated by 90°, showing that the LNO thin film is cubic-on-cubic grown on STO substrate. In-situ high temperature XRD measurement showed epitaxial growth of LNO thin film on STO substrate. Metal cations could be released orderly on the monocrystalline substrate and epitaxial crystallization occurs after decomposition of polymer. XPS results indicated that LaNiO3 thin film fabricated by PAD was stoichiometric without oxygen vacancy. The atomic force microscopy analysis showed that the smooth surface with root-mean-square surface roughness was 0.67 nm. The resistivity as functions of temperature revealed that it has good conductivity from 10 K to 300 K. All results demonstrate that the LaNiO3 thin films deposited by PAD have better comprehensive performance, indicating that PAD method has great potential for preparing epitaxial functional thin film materials.

Key words: LaNiO3, conductive film, polymer assisted deposition, epitaxial

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