Preparation and Photodetection Property of ZnO Nanorods/ZnCo2O4 Nanoplates Heterojunction

doi:10.15541/jim20180563

Abstract

Abstract:

Heterojunction-type nanostructures based on ZnO nanomaterials are one of the important candidates for constructing high-performance ultraviolet (UV) photodetectors. In this work, a novel ZnO nanorods/ZnCo₂O₄ nanoplates heterojunction was designed and prepared, and the electrical properties and photodetection properties of the as-prepared heterojunction were investigated. ZnCo₂O₄ nanoplates were constructed into uniform thin film on ITO glass substrate using oil/water interface self-assembly. Next, ZnO nanorod arrays with uniform orientation and proper density were grown on ZnCo₂O₄ nanoplates thin film using hydrothermal method with the help from ZnO seed layer. As a result, high-quality ZnO nanorods/ZnCo₂O₄ nanoplates heterojunction was achieved. This heterojunction has a high rectification ratio of 673.7. Under reverse bias, this heterojunction has a light-dark current ration of more than two orders of magnitude. The UV-visible rejection ratio of this heterojunction is 29.4, which indicates its selective detection of UV light. These results effectively prove the potential of this ZnO nanorods/ZnCo₂O₄ nanoplates heterojunction in constructing high-performance UV photodetectors.

Key words: ZnO, nanomaterials, heterojunction, photodetection

CLC Number:

TN364

ZHANG Zhi-Ming,FANG Xiao-Sheng. Preparation and Photodetection Property of ZnO Nanorods/ZnCo₂O₄ Nanoplates Heterojunction[J]. Journal of Inorganic Materials, 2019, 34(9): 991-996.

Figures/Tables 6

Fig. 1 AFM (a) and SEM (b) characterization of ZnCo2O4 nanoplates, optical images of ZnCo2O4 nanoplates thin film before (c) and after (d) ultrasonic treatment

Fig. 2 SEM images of ZnO grown with seed layers of different thicknesses (a-b) No seed layer; (c-d) 5 nm seed layer; (e-f) 15 nm seed layer; (g-h) 50 nm seed layer

Fig. 3 Diagram of ZnO nanorods/ZnCo2O4 nanoplates heterojunction device (a), I-V characteristics of ZnO nanorod arrays (b), I-V characteristics (c) and zoomed in graph (0-1 V) (d) of ZnO nanorods/ZnCo2O4 nanoplates heterojunction

Fig. 4 Photodetection properties of ZnO nanorods/ZnCo2O4 nanoplates heterojunction device (a) Band diagram under forward and reverse bias; (b) Photoelectric response to 350 nm (0.753 mW?·cm-2) UV light; (c) Photoelectric response to illumination of different wavelength under reverse bias; (d) Responsivity

Fig. S1 Side-view SEM image of ZnO nanorod arrays

Fig. S2 Rectification characteristics of ZnO nanorods/ZnCo2O4 nanoplates heterojunction with part of the ZnO contacting ITO directly

References 30

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Preparation and Photodetection Property of ZnO Nanorods/ZnCo₂O₄ Nanoplates Heterojunction

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