Phototransistor Based on Single TaON Nanobelt and Its Photoresponse from Ultraviolet to Near-infrared

doi:10.15541/jim20180584

Abstract

Abstract:

TaON nanobelts (NBs) were controllably synthesized by Ta₂O₅ NBs template-conversion method. The typical NBs have cross-sections of 40 nm×200 nm-400 nm×5600 nm, and lengths up to about 0.5 cm. A field effect transistor (FET) based on single TaON NB was fabricated on SiO₂/Si substrate. The electronic mobility and on-off ratio of the nanobelts are 9.53×10 ^-4cm ²/(V·s) and 3.4, respectively. The FET shows good photoresponses from 254 nm to 850 nm. Under irradiation of 405 nm light (42 mW/cm ²), the responsivity is 249 mA/W at a bias of 5.0 V, and the photoswitch current ratio is 11. Therefore, the phototransistor shows a good photodetectivity, and TaON NBs may become good candidates for fabricating optoelectronic devices. Additionally, Ta₂O₅@TaON composite NBs were also synthesized, and a FET based on the single NB was fabricated. Under irradiation of the same light, its photoresponse is weaker than TaON NB, but it is still a good optoelectronic material.

Key words: TaON nanobelt, template synthesis, field effect transistor, photodetector

CLC Number:

TQ174

TAO You-Rong,CHEN Jin-Qiang,WU Xing-Cai. Phototransistor Based on Single TaON Nanobelt and Its Photoresponse from Ultraviolet to Near-infrared[J]. Journal of Inorganic Materials, 2019, 34(9): 1004-1010.

Figures/Tables 6

Fig. 1 (a) XRD pattern, (b) low-magnification SEM image (inset: light photograph), and (c) high-magnification SEM image of TaON nanobelts; (d) TEM image of a single TaON nanobelt with inset in the middle showing corresponding HRTEM image, and inset on the upper right corner showing FFT pattern of HRTEM image

Fig. 2 (a) XRD pattern (a peak with star representing Ta2O5, and the rest peaks representing TaON), (b) low-magnification SEM image (inset: light photograph), and (c) TEM image of Ta2O5@TaON composite nanobelts; (d) TEM image of a single Ta2O5@TaON nanobelt; (e, f) HRTEM images of square A and B in (d), respectively with insets showing FFT patterns of corresponding HRTEM images

Fig. 3 (a) Scheme of FET based on a single TaON nanobelt; (b) Overlooked AFM image of the FET with inset showing size profile of the nanobelt; (c) Ids-Vds plots at different Vg; (d) Ids-Vg plot at Vds= 1 V

Fig. 4 (a) Photograph of a single TaON nanobelt FET, (b) I-V characteristics of the FET illuminated and unilluminated with different wavelength light, (c) responsivities of the FET to different wavelengths with inset showing UV-Vis absorption spectrum of TaON NBs, (d, f) transient photoresponses of the FET illuminated by 405 nm (42 mW/cm2) light pulse chopped with a photoswitch period of 1 and 50 s at bias of 5 V and (e) local magnification of (d) from 3.2 s to 5.6 s

Fig. 5 (a) Photography of FET based on a single Ta2O5@TaON nanobelt, (b) photoresponsivities of the FET to different wavelengths with inset showing UV-Vis absorption spectrum of Ta2O5@TaON NBs, (c) I-V characteristics of the FET unilluminated illuminated with different wavelength light, and (d) transient responses of the FET illuminated with a 405 nm (42 mW/cm2) light pulse chopped with a photoswitch period of 50 s at a bias voltage of 5 V

Photodetector	Wavelength/Power	Bias voltage/V	R_l/(A·W^-1)	Photoswitch current ratio	Rise time/ Decay time	Ref.
CdTe NB	400 nm/637 mW·cm^-2	10	12	1.1	~1.1s/~3.3 s	[27]
Single-layer MoS₂	550 nm/80 mW	1	4.2′10^-4		<0.05 s	[28]
GaS NB	490 nm/0.5 mW·cm^-2	2	2.3′10^-3		<0.03 s	[29]
ZrS₃NB	405 nm/10.5 mW·cm^-2	5	3.9	13	<0.4 s	[6]
Ta₃N₅ NB	450 nm/2.8 mW·cm^-2	2	99.6	~1.5	~45 ms/40 ms	[24]
TaON NB	405 nm/ 42 mW·cm^-2	5	0.249	11	<0.2 s	This work
Ta₂O₅@TaON NB	405 nm/ 42 mW·cm^-2	5	3.9×10^-3	2	<0.2 s	This work

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