Thermoelectric Properties of (Ag2Se)1-x(Bi2Se3)x

doi:10.15541/jim20180249

Abstract

Abstract:

Ternary chalcogenides I-V-VI₂ compounds attract extensive attentions for thermoelectric applications due to their intrinsically low lattice thermal conductivity. AgBiSe₂, as one of a few n-type semiconductors among these compounds, shows the potential to be a promising thermoelectric material. Therefore, this work focuses on its thermoelectric properties. According to the phase diagram of Ag₂Se-Bi₂Se₃ system, the single phase region of (Ag₂Se)_1-_x(Bi₂Se₃)_x allows x to be varied in the range of 0.4~0.62. This large variation of x suggests a tunability of carrier concentration for this material. A broad carrier concentration of 1.0×10¹⁹~5.7×10¹⁹ cm^-3 for single phased (Ag₂Se)_1-_x(Bi₂Se₃)_x is obtained through a composition manipulation, which enables a comprehensive assessment on electronic transport properties based on a single parabolic band model with acoustic scattering. The highest carrier concentration obtained in this work, approaching to the theoretical optimal one, leads to a peak ZT of 0.5 at 700 K. This work offers a well understanding of its transport properties and underlying physical parameters determining the thermoelectric performance.

Key words: thermoelectric material, thermoelectric properties, AgBiSe₂, carrier concentration, SPB model

CLC Number:

TB34

LIU Hong-Xia, LI Wen, ZHANG Xin-Yue, LI Juan, PEI Yan-Zhong. Thermoelectric Properties of (Ag₂Se)_1-_x(Bi₂Se₃)_x[J]. Journal of Inorganic Materials, 2019, 34(3): 341-348.

Figures/Tables 9

Fig. 1 Crystal structures for the different phases of AgBiSe2 (a) and phase diagram of Ag2Se-Bi2Se3 system (b)[57]

Fig. 2 Powder XRD patterns for (Ag2Se)1-x(Bi2Se3)x(0.4≤x≤0.62)

Fig. 3 Locally enlarged XRD patterns (a) and composition dependent lattice parameters (b) for the samples with 0.48≤x≤0.56

Fig. 4 SEM images for (Ag2Se)1-x(Bi2Se3)x(0.48≤x≤0.56) (a, c-g) and its corresponding EDS mapping for the samples with x=0.48 (b) and 0.58 (h)

Fig. 5 Composition dependent Hall carrier concentration (a) and normalized optical absorption versus photon energy (b) at room temperature for (Ag2Se)1-x(Bi2Se3)x(0.5≤x≤0.56)

Fig. 6 Temperature dependent Hall coefficient (RH) and mobility (µH) (a), deformation potential coefficient (Edef) and density of states effective mass (m*) (b), Hall carrier concentration dependent Hall mobility (c) and Seebeck coefficient (d) at different temperatures for (Ag2Se)1-x(Bi2Se3)x(0.5≤x≤0.56), with a comparison to available literature results[52,64-65]. The experimental results here agree well with the model prediction based on a SPB approximation with a dominant scattering by acoustic phonons

Fig. 7 Temperature dependent Seebeck coefficient (a), electrical resistivity (b), total thermal conductivity (c) and lattice thermal conductivity (d) for (Ag2Se)1-x(Bi2Se3)x(0.5≤x≤0.56), with a comparison to available literature results[63,64]

Table 1 Measured sound velocities and the estimated physical parameters for (Ag2Se)1-x(Bi2Se3)x(0.5≤x≤0.56)

(Ag₂Se)_1-_x(Bi₂Se₃)_x	ν_T/(m•s^-1)	ν_L/(m•s^-1)	ν_s/(m•s^-1)	B/ GPa	γ	θ_D/K
x=0.5	1390	2560	1550	31.5	1.7	158
x=0.51	1410	2610	1570	32.4	1.7	159
x=0.52	1360	2500	1520	29.6	1.7	154
x=0.54	1290	2660	1450	37.8	2.1	146
x=0.56	1380	2760	1550	39.8	2.0	156

Fig. 8 Temperature dependent ZT for (Ag2Se)1-x(Bi2Se3)x(0.5≤x≤0.56) (a) and Hall carrier concentration dependentZT at different temperatures (b) with a comparison to model prediction and literature results[52,63-65]

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Thermoelectric Properties of (Ag₂Se)_1-_x(Bi₂Se₃)_x

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