Controllable Synthesis of Vertically Aligned ReS2(1-x)Se2x Nanosheets with Tunable Chemical Compositions and Bandgaps

doi:10.15541/jim20180065

Abstract

Abstract:

2D transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Both morphology control and bandgap modulation of TMD alloys are critical for their applications in optoelectronics, photonics and nanoelectronics. In this work, the synthesis of vertically aligned ReS_2(1-_x₎Se₂_x alloy nanosheets with tunable compositions on SiO₂/Si substrate was achieved via CVD technology. The resulting ReS_2(1-_x₎Se₂_x nanosheets were obtained by selenizing the vertically aligned ReS₂ nanosheets at various temperatures for different durations. The ReS_2(1-_x₎Se₂_x samples were characterized by XRD, SEM, XPS, HRTEM, elemental mapping, Raman spectra, and UV-Vis-NIR absorption spectra. Experimental results showed that the Se contents in ReS_2(1-_x₎Se₂_x nanosheets can be gradually tuned from x=0 (pure ReS₂) to x=0.86, and the bandgaps of the products were correspondingly modulated from 1.55 eV (800 nm) to 1.28 eV (969 nm). Moreover, the temperature and duration of selenization have huge effect on the morphology of the resulting ReS_2(1-_x₎Se₂_x alloyed nanosheets, as evidenced by SEM observation. The vertical ReS_2(1-_x₎Se₂_x alloy nanosheets may have significant application potential, e. g. , in the electrochemical catalysis, functional electeonic and optoelectronic devices.

Key words: ReS_2(1-_x₎Se₂_x, ReS₂, selenizing, vertically aligned, bandgap modulation

CLC Number:

TQ174

AO Wei-Dong, LIU Yan, MA Qing-Shan, LIU Huan, ZHOU Bin, ZHENG Xiao-Jia, YU Dong-Qi, ZHANG Wen-Hua. Controllable Synthesis of Vertically Aligned ReS_2(1-_x₎Se₂_x Nanosheets with Tunable Chemical Compositions and Bandgaps[J]. Journal of Inorganic Materials, 2018, 33(10): 1083-1088.

Figures/Tables 6

Fig. 1 SEM image of ReS2 nanosheets grown at 450℃ (a,b) (2.5 h), and (c-h) SEM images of ReS2(1-x)Se2x nanosheets selenized at different conditions (c) 700℃ (0.5 h); (d) 850℃ (0.5 h); (e) 920℃ (0.5 h); (f) 850℃ (1 h); (g) 850℃ (1.5 h); (h) 920℃ (1 h).

Fig. 2 (a) Schematic illustration of the crystal structure of ReS2(1-x)Se2x nanosheets and (b) XRD patterns of (i) ReS2 nanosheets grown at 450℃; (ii) ReS2(1-x)Se2x nanosheets selenized at 700℃ for 0.5 h; (iii) ReS2(1-x)Se2x nanosheets selenized at 850℃ for 0.5 h; (iv) ReS2(1-x)Se2x nanosheets selenized at 920℃ for 0.5 h; (v) ReSe2 nanosheets grown at 750℃

Fig. 3 (a,b) HRTEM images of ReS2 and ReS2(1-x)Se2x nanosheets, (c) TEM image of the ReS2(1-x)Se2x nanosheets and (d-f) elemental mapping for the ReS2(1-x)Se2x nanosheets

Fig. 4 Core-level XPS spectra of the ReS2(1-x)Se2x nanosheets selenized at different temperatures(i) ReS2 (x=0) nanosheets grown at 450℃; (ii) ReS2(1-x)Se2x (x=0.21) nanosheets selenized at 700℃ for 0.5 h; (iii) ReS2(1-x)Se2x (x=0.47) nanosheets selenized at 850℃ for 0.5 h; (iv) ReS2(1-x)Se2x (x=0.86) nanosheets selenized at 920℃ for 0.5 h

Fig. 5 Raman spectra of the ReS2(1-x)Se2x nanosheets(i) ReS2 (x=0) nanosheets grown at 450℃; (ii) ReS2(1-x)Se2x (x=0.21) nanosheets selenized at 700℃ for 0.5 h; (iii) ReS2(1-x)Se2x (x=0.47) nanosheets selenized at 850℃ for 0.5 h; (iv) ReS2(1-x)Se2x (x=0.86) nanosheets selenized at 920℃ for 0.5 h; (v) ReSe2 (x=1) nanosheets grown at 750℃

Fig. 6 (a) UV-Vis-NIR absorption spectra for the ReS2(1-x)Se2x nanosheets with various Se contents and (b) relationship between the band gaps of the nanosheets and the contents of Se in the products

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Controllable Synthesis of Vertically Aligned ReS_2(1-_x₎Se₂_x Nanosheets with Tunable Chemical Compositions and Bandgaps

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References 31

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