Journal of Inorganic Materials ›› 2018, Vol. 33 ›› Issue (5): 540-544.DOI: 10.15541/jim20170300
• RESEARCH PAPER • Previous Articles Next Articles
ZHAO Ning1, LIU Chun-Jun1, WANG Bo1,2, PENG Tong-Hua1,2
Received:
2017-06-14
Revised:
2017-08-26
Published:
2018-05-20
Online:
2018-04-26
About author:
ZHAO Ning. E-mail: zhaoning10086@foxmail.com
Supported by:
CLC Number:
ZHAO Ning, LIU Chun-Jun, WANG Bo, PENG Tong-Hua. Stacking Faults in 4H-SiC Single Crystal[J]. Journal of Inorganic Materials, 2018, 33(5): 540-544.
Fig. 3 (a) OM image of the point S of side face of the etched (1¯100) wafer and (b) OM image of the point T which is symmetrical to the point S of side face of the etched (1¯100) wafer
Fig. 4 (a) OM image of the end CG of DCGH face of the etched (1¯100) wafer, (b) OM image of the end BC of ABCD face of the etched (1¯100) wafer and (c) stitching OM image of (a) and (b)
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