Research of Graphene/Antireflection Nanostructure Composite Transparent Conducting Films

doi:10.15541/jim20160310

Abstract

Abstract:

The graphene film was directly deposited on SiO₂ antireflection(AR) structure by remote catalyzation of Cu nanoparticles using chemical vapor deposition method to fabricate the transparent conducting films with graphene/AR composite structure. Continuous graphene hollow sphere array was obtained after removing SiO₂ AR structure, and the peak intensity ratios of I_2D/I_G and I_D/I_G and the full-width at half-height maximum (FWHM) of the 2D peak in the Raman spectrum of the graphene grew in 10 min were 2.31, 0.77 and about 40 cm^-1, respectively, which demonstrated that the continuous and low-defect few layer graphene was grown on the surface of SiO₂ AR structure. By introducing the SiO₂ AR structure, transmittance of the film increases by 5.5% at 550 nm and the sheet resistance decreases by 20.09% on the average. Data from this study suggest that this film can avoid complex transfer process, decrease damage, and on the meantime realize high transparency and high conductivity performance , showing obvious applicable prospects in the field of photovoltaic devices, flat panel display and so on.

Key words: transparent conducting films, graphene, CVD, remote catalyzation of Cu nanoparticles, SiO2 antireflection nanostructure

CLC Number:

TQ174

HAN Shuang-Shuang, LIU Li-Yue, SHAN Yong-Kui, YANG Fan, LI De-Zeng. Research of Graphene/Antireflection Nanostructure Composite Transparent Conducting Films[J]. Journal of Inorganic Materials, 2017, 32(2): 197-202.

Figures/Tables 10

Fig. 1 SEM images of monodisperse SiO2 NSs structure before (a) and after (b) growth of graphene and the magnification image of GE/SiO2 NSs (c) with EDS characterization of the Cu NPs left on the substrate in (c)

Fig. 2 TEM images of GE/SiO2 NSs /quartz (a) and hollow graphene NSs (b) by removing SiO2 NSs, high magnification TEM image of hollow graphene NSs (c)

Table 1 Raman spectra analysis of graphene grown for different time

Growth time	2D band		I_D/I_G	I_2D/I_G	L_a/nm
	Position	FWHM
	cm^-1	cm^-1
10 min	2697.60	40	0.77	2.31	24.9
15 min	2691.69	45	0.76	0.95	25.3
20 min	2695.55	56	0.64	0.84	30.0
25 min	2690.72	55	0.60	0.49	32.0

Fig. 3 Raman spectra of GE/SiO2 NSs /quartz grown at 1000℃ for different time

Fig. 4 Transmission spectra of the substrate coated with and without SiO2 NSs AR nanostructure

Fig. 5 Optical transmittance spectra of the GE/SiO2 NSs AR /quartz (a), transmittance (at 550 nm) (b) and sheet resistance as a function of growth time(c)

Table 2 Transmittance and sheet resistance of samples

Growth time		10 min	15 min	20 min	25 min
Transmittance/%	GE/quartz	90.30	88.90	86.40	78.60
	GE/SiO₂ NS AR film/quartz	96.30	95.00	91.80	83.00
	Increment/%	6.640	6.86	6.25	5.60
Sheet resistance/(kΩ·□^-1)	GE/quartz	--	16.30	6.07	1.25
	GE/SiO₂ NS AR film/quartz	20.50	12.30	5.60	0.90
	Decrease/%		24.54	7.74	28.00

图S1 不同水硅比(n(H2O) : n(TEOS) )制备的SiO2纳米球阵列减反结构的透光度图谱(a), 不同水硅比制备的减反结构的SEM照片(b~d) Fig. S1 (a) Transmission spectra of the SiO2 NSs AR/quartz with different mole ratios (n(H2O) : n(TEOS)), SEM images of the SiO2 NSs AR/quartz prepared from different mole ratios( n(H2O) : n(TEOS)) (b-d)

图S2 不同浸渍时间对SiO2纳米球阵列减反结构透光度的影响 Fig. S2 Influences on SiO2 NSs AR nanostructure reflection from dipping time

图S3 镀膜提拉速度对SiO2纳米球阵列减反结构减反性能的影响表征 Fig. S3 Relationship between on SiO2 NSs AR nanostructure reflection from the withdrawal rate(a) Transmission spectra of the SiO2 NSs AR /quartz with different withdrawal rate, (b) Transmittance of SiO2 NSs AR /quartz as a function of withdrawal rate, and (c-e) SEM images of the SiO2 NSs AR /quartz prepared with different withdrawal rates

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