Effect of Residual Stress on Magnetic and Electrical Transport Properties in SrRuO3 Thin Films

doi:10.15541/jim20160190

Abstract

Abstract:

A series of SrRuO₃ (SRO) thin films with preferential orientations were grown on SrTiO₃ (STO) and Si substrates respectively by radio frequency (RF) magnetron sputtering technique. XRD results show that STO-based SRO thin films are epitaxial which differ from the one-axis orineted Si-based films. Residual stress type of the deposited films and effect of the stress on magnetic and electrical transport properties were systematically analyzed and summarized. STO-based SRO films suffer from compressive stress due to the lattice and thermal mismatch, while the Si-based films are subjected to tensile stress which is only derived from the thermal mismatch. The compressive stress promotes the Curie temperature (T_C) of (001)-oriented SRO films, but reduces the T_C of (110)-oriented SRO films, which may be due to the different states of rotation and tilt of RuO₆ octahedron. Besides, the (001)-oriented SRO films possess higher T_C than the (110)-oriented SRO films all along. The results of temperature versus resistivity measurements reveal that residual resistivity ratio (RRR) of (001)-oriented SRO films is higher than that of (110)-oriented SRO films which deposited on the same substrate. Moreover, the temperature of metal-insulator transition (T_MI) increases from 16 K to 32 K while the temperature dependence of resistivity is suppressed by the tensile stress.

Key words: SrRuO3, orientation, residual stress, magnetic properties, transport properties

CLC Number:

TQ174

ZHU Ming-Kang, DONG Xian-Lin, CHEN Yin, DING Guo-Ji, WANG Gen-Shui. Effect of Residual Stress on Magnetic and Electrical Transport Properties in SrRuO₃ Thin Films[J]. Journal of Inorganic Materials, 2017, 32(1): 75-80.

Figures/Tables 6

Table1 Sputtering parameters of LNO and SRO films

Sputtering parameters	LNO	SRO
Base pressure /Pa	5×10^-4	5×10^-4
Deposition pressure/Pa	3	10
Power/W	80	80
O₂/(Ar+O₂)	20%	20%
Substrate temperature/℃	450	600

Fig. 1 XRD patterns of SrRuO3 thin films deposited on different substrates(a) (100)SrTiO3 and LNO/SiO2/Si; (b) (110) SrTiO3 and SiO2/Si

Table2 Lattice parameters and strain of different SRO films

SRO	c/nm	ɛ/%
(001) on STO	0.3962	0.814
(001) on Si	0.3916	-0.356
(110) on STO	0.3945	0.383
(110) on Si	0.3917	-0.336

Fig. 2 Schematic illustration of stress state for different oriented SRO films on various substates

Fig. 3 (a) Temperature versus magnetization under field cooling (FC) conditions and (b) the dM/dT vs temperature for different oriented SRO films on various substrates

Fig. 4 (a) Temperature versus normalized resistivity and (b) the dρ/dT values vs temperature for different oriented SRO films on various substrates

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Effect of Residual Stress on Magnetic and Electrical Transport Properties in SrRuO₃ Thin Films

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