APS Bias Voltage on Properties of HfO2 Laser Films Deposited by Reactive Plasma Ion Assisted Electron Evaporation

doi:10.15541/jim20160170

Abstract

Abstract:

The anti laser HfO₂films were deposited by reactive plasma ion assisted electron beam evaporation in low O₂-pressure with different Advanced Plasma Source (APS) bias voltages. Properties of HfO₂ film sincluding chemical composition, refractive index and residual stress were investigated. Microstructure of HfO₂films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Laser induced damage threshold (LIDT) and damage mechanisms of HfO₂ films were finally evaluated and discussed. Properties of HfO₂ films display sensitive to APS bias voltage. As the APS bias voltage decreases, the O/Hf ratio in the film increases, accompanied by decreasing refractive index and residual stress. The damage morphology of HfO₂ films appears in the form of agglomerations of craters with a few hundreds of nanometers, left by evaporation of grains ascribed to strong absorption and accumulation of laser energy at grain-boundaries. HfO₂ films with higher LIDT can be grown under lower bias voltage which benefits the achievement of uniform microstructure and the crystallization orientation from ( $1 ? 11$ ) plane to (002) plane with low grain boundary energy and lattice defects.

Key words: HfO2 film, plasma-assisted electron beam evaporation, bias voltage, microstructure, laser damage

CLC Number:

O484

FU Chao-Li, YANG Yong, MA Yun-Feng, WEI Yu-Quan, JIAO Zheng, HUANG Zheng-Ren. APS Bias Voltage on Properties of HfO₂ Laser Films Deposited by Reactive Plasma Ion Assisted Electron Evaporation[J]. Journal of Inorganic Materials, 2017, 32(1): 69-74.

Figures/Tables 10

Table 1 Deposition conditions of HfO2 films

Samples	APS bias voltage/V	APS discharge current/A	Rate/(nm·s^-1)	Temperature/℃	EBG-O₂/sccm	APS-O₂/sccm
1#	120	55	0.1	200	30	45
2#	110	55	0.1	200	30	45
3#	100	55	0.1	200	30	45
4#	90	55	0.1	200	30	45
5#	70	55	0.1	200	30	45

Fig. 1 Schematic illustration of the curvature radius calculation

Fig. 2 EDS pattern of the HfO2 film

Fig. 3 Effect of APS bias voltage on the O/Hf ratio of HfO2 films

Fig. 4 Optical properties of HfO2 films deposited at different APS bias voltages(a) Transmittance spectra; (b) Refractive index dispersion spectra

Fig. 5 Effect of APS bias voltage on the residual stress of HfO2 films

Fig. 6 XRD patterns of HfO2 films deposited at different APS bias voltages

Fig. 7 SEM images of HfO2 films deposited at different bias voltages(a) 120 V; (b) 110 V; (c) 100 V; (d) 90 V

Fig. 8 LIDT of HfO2 films deposited at different APS bias voltages

Fig. 9 SEM images of the laser damaged HfO2 film deposited at bias voltage of 90 VAt fluence of (a) 4.6 J/cm2; (b) 6 J/cm2; (c) 6 J/cm2

References 32

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APS Bias Voltage on Properties of HfO₂ Laser Films Deposited by Reactive Plasma Ion Assisted Electron Evaporation

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Samples	APS bias voltage/V	APS discharge current/A	Rate/(nm·s^-1)	Temperature/℃	EBG-O₂/sccm	APS-O₂/sccm
1#	120	55	0.1	200	30	45
2#	110	55	0.1	200	30	45
3#	100	55	0.1	200	30	45
4#	90	55	0.1	200	30	45
5#	70	55	0.1	200	30	45

Samples	APS bias voltage/V	APS discharge current/A	Rate/(nm·s^-1)	Temperature/℃	EBG-O₂/sccm	APS-O₂/sccm
1#	120	55	0.1	200	30	45
2#	110	55	0.1	200	30	45
3#	100	55	0.1	200	30	45
4#	90	55	0.1	200	30	45
5#	70	55	0.1	200	30	45

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Samples	APS bias voltage/V	APS discharge current/A	Rate/(nm·s^-1)	Temperature/℃	EBG-O₂/sccm	APS-O₂/sccm
1#	120	55	0.1	200	30	45
2#	110	55	0.1	200	30	45
3#	100	55	0.1	200	30	45
4#	90	55	0.1	200	30	45
5#	70	55	0.1	200	30	45

Samples	APS bias voltage/V	APS discharge current/A	Rate/(nm·s^-1)	Temperature/℃	EBG-O₂/sccm	APS-O₂/sccm
1#	120	55	0.1	200	30	45
2#	110	55	0.1	200	30	45
3#	100	55	0.1	200	30	45
4#	90	55	0.1	200	30	45
5#	70	55	0.1	200	30	45

Samples	APS bias voltage/V	APS discharge current/A	Rate/(nm·s^-1)	Temperature/℃	EBG-O₂/sccm	APS-O₂/sccm
1#	120	55	0.1	200	30	45
2#	110	55	0.1	200	30	45
3#	100	55	0.1	200	30	45
4#	90	55	0.1	200	30	45
5#	70	55	0.1	200	30	45

Samples	APS bias voltage/V	APS discharge current/A	Rate/(nm·s^-1)	Temperature/℃	EBG-O₂/sccm	APS-O₂/sccm
1#	120	55	0.1	200	30	45
2#	110	55	0.1	200	30	45
3#	100	55	0.1	200	30	45
4#	90	55	0.1	200	30	45
5#	70	55	0.1	200	30	45