Journal of Inorganic Materials ›› 2016, Vol. 31 ›› Issue (10): 1135-1140.DOI: 10.15541/jim20160179

• Orginal Article • Previous Articles     Next Articles

Synthesis of Core-shell Structure In2Se3/Cuse Micro/Nano-powders Followed by Coated-rapid Heating Treatment Method for Preparing CuInSe2 Thin Films

LI Bin1, LI Ying-Lian1, MO Shu-Yi1, CHEN Ming-Guang2, WANG Dong-Sheng2, LONG Fei1   

  1. (1. Guangxi Key Laboratory in Universities of Clean Metallurgy and Comprehensive Utilization for Non-ferrous Metals Resources, Key Laboratory of Nonferrous Materials and New Processing Technology of Ministry of Education, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China; 2. Guangxi Dikai PV Energy Co., Ltd, Nanning 530003, China)
  • Received:2016-03-28 Revised:2016-04-30 Published:2016-10-20 Online:2016-09-23
  • About author:LI Bin. E-mail: LB2272679757@163.com
  • Supported by:
    National Natural Science Foundation of China (51372044);The Program for New Century Excellent Talents in University (NCET-12-0655)

Abstract:

Different In2Se3/CuSe nano-powders were successfully fabricated by ultrasound and microwave solvothermal, atmospheric pressure, or high pressure solvothermal methods. Then the thin film solar cell absorbent layer was prepared through coated-rapid heating treatment system using above nano-powders. The phase, morphology and composition of the powders and CIS film were characterized by XRD, Raman, FESEM, and TEM. The results showed that the ultrasonic microwave solvothermal and atmospheric pressure solvothermal methods produced a mixture of In2Se3/CuSe. However, high pressure solvothermal method obtained core-shell structure In2Se3/CuSe powders (In2Se3-core, CuSe-shell). In addition, FESEM analysis revealed that the In2Se3/CuSe powders prepared by high pressure solvothermal method were easier to produce smooth and dense CIS film. The fabricated CIS thin-film solar cell was demonstrated its photoelectric conversion property with open-circuit voltage of 50 mV and short-circuit current density of 8 mA/cm2.

Key words: CIS, solvothermal method, In2Se3/CuSe, core-Shell, coating method

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