Preparation and Thermoelectric Transport of Polycrystalline In4Se3 with High Figures of Merit

doi:10.15541/jim20140396

Abstract

Abstract:

Polycrystalline In₄Se₃ thermoelectric materials were synthesized in the processing sequence of vacuum melting, annealing and spark plasma sintering. The effect(s) of melting and annealing duration periods on the phase, composition, microstructure, and thermoelectric properties of polycrystalline In₄Se₃ were investigated. After the melting process, both In and InSe phase were detected in the ingots. With increasing melting duration time, an increase in Se deficiency was observed, leading to an increase of carrier concentration, which contributed to the observed improvement of electrical conductivity. The specimen melted for 48 h showed relatively higher ZT. Thus on the basis of 48 h melting process, the ingots were then annealed for different periods of time, which eliminated the presence of InSe phase. After annealing, scattered large step-like structures were observed in the matrix, which favored the reduction of thermal conductivity but had no significant influence on the electrical conductivity. The ZT was significantly enhanced to 0.83 at 702 K by extending melting and annealing duration time to 48 h and 96 h, respectively, which is 32% higher than that reported in literature. It was concluded that both the extension of melting and annealing duration periods could improve the thermoelectric performance of polycrystalline In₄Se₃.

Key words: In4Se3, thermoelectric properties, vacuum melting, annealing

CLC Number:

TB34

ZHAO Ran, MA Li-Min, GUO Fu, HU Yang-Duan-Rui, SHU Yu-Tian. Preparation and Thermoelectric Transport of Polycrystalline In₄Se₃
with High Figures of Merit[J]. Journal of Inorganic Materials, 2015, 30(3): 249-255.

Figures/Tables 8

Fig. 1 XRD patterns for the specimens melted for different periods

Table 1 XRF results for the specimens melted for different periods

Melting time/h	In/at%	Se/at%	In:Se
12	59.37	40.63	4:2.74
24	59.70	40.30	4:2.70
48	61.16	38.84	4:2.54

Fig. 2 Temperature dependence of thermoelectric property for the specimens melted for different periods

Table 2 Electrical properties at room temperature for the specimens melted for different periods

Melting time/h	Carrier concentration/cm^-3	Carrier mobility /(cm²·V^-1·s^-1)
12	-2.22×10¹⁷	184.95
24	-4.65×10¹⁷	138.59
48	-5.42×10¹⁷	116.03

Fig. 3 XRD patterns for specimens annealed for different periods

Table 3 XRF results for the specimens annealed for different periods

Annealing time/h	In/at%	Se/at%	In: Se
0	61.16	38.84	4: 2.54
48	61.04	38.96	4: 2.53
96	61.27	38.73	4: 2.53
144	61.19	38.81	4: 2.54

Fig. 4 Fractographies of the specimens annealed for different periods (a) 0 h; (b) 48 h; (c) 96 h; (d) 144 h; (e) Enlarged image of (c)

Fig. 5 Temperature dependence of thermoelectric property for specimens annealed for different periods (a) Electrical conductivity; (b) Seebeck coefficient; (c) Thermal conductivity; (d) ZT value[11, 16]

References 33

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Preparation and Thermoelectric Transport of Polycrystalline In₄Se₃
with High Figures of Merit

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