Journal of Inorganic Materials ›› 2015, Vol. 30 ›› Issue (2): 202-206.DOI: 10.15541/jim20140298

• Orginal Article • Previous Articles     Next Articles

Microwave Dielectric Properties of BiMg2VO6 Ceramic with Low Sintering Temperature

XIE Hui-Dong, XI Hai-Hong, LI Fei, CHEN Chao   

  1. (School of Science, Xi’an University of Architecture and Technology, Xi’an 710055, China)
  • Received:2014-06-07 Revised:2014-08-11 Published:2015-02-20 Online:2015-01-27
  • Supported by:
    Special Fund of China Postdoctoral Science Foundation (2012T50801)

Abstract:

A low firing microwave dielectric ceramic BiMg2VO6 was prepared via conventional solid state reaction method. The chemical compatibility, phase, morphology, density and microwave dielectric properties of the ceramic in the sintering temperature range of 720~840℃ were studied. The infrared reflectivity spectra of the ceramic were measured. Results showed that the BiMg2VO6 ceramics did not react with Ag at 780℃ and the relative densities of the samples were greater than 93.8% at every sintering temperature conditions. Ceramic sintered at 780℃ for 2 h showed the optimum microwave dielectric properties with permittivity of 13.34, Q×f value of 15610 GHz (f= 8.775 GHz) and temperature coefficient value of -87.2×10-6/℃. The optical frequency permittivity was 3.4 and the extrapolated value to microwave frequency was 13.5. The optimum microwave dielectric properties and low sintering temperature of BiMg2VO6 ceramic enable it a promising candidate for low temperature co-fired ceramic applications.

Key words: BiMg2VO6, microwave dielectric properties, sintering behavior

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