Influence of Growth Temperature and Oxygen Pressure on Laser-induced Voltage Effect of La0.67Sr0.33MnO3:Ag0.08 Thin Films

doi:10.3724/SP.J.1077.2014.13562

Abstract

Abstract:

La_0.67Sr_0.33MnO₃:Ag_0.08(LSMO:Ag_0.08) polycrystalline ceramics were prepared by chemical co-precipitation method, and then La_0.67Sr_0.33MnO₃:Ag_0.08 thin films were prepared on vicinal cut LaAlO₃ (LAO) substrates by pulsed laser deposition (PLD) technique. Effects of growth temperature and oxygen pressure on structure, electrical transport properties and laser-induced voltage (LIV) effect were investigated. The results show that the maximum LIV peak (U_p), the figure of merit (F_m) and anisotropy Seebeck coefficient (ΔS) are obtained for LSMO:Ag_0.08 thin films when growth temperature and oxygen pressure are 790 ℃ and 45 Pa, respectively. The LIV enhancement of LSMO:Ag_0.08 thin films is due to the anisotropy of the Seebeck coefficient, which is produced by long range cooperative Jahn-Teller distortions under optimal growth temperature and oxygen pressure conditions.

Key words: growth temperature, oxygen pressure, pulsed laser deposition, laser-induced voltage, anisotropic Seebeck coefficient

CLC Number:

TB321

YAN Yi-Zhi, YIN Xue-Peng, LIU Xiang, CHEN Qing-Ming. Influence of Growth Temperature and Oxygen Pressure on Laser-induced Voltage Effect of La_0.67Sr_0.33MnO₃:Ag_0.08Thin Films[J]. Journal of Inorganic Materials, 2014, 29(7): 753-757.

Figures/Tables 4

References 19

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Growth condition	c/nm	T_p/K	TCR/%	U_P/mV	τ /ns	F_m/(mV•ns^-1)	?_ZT/(K•cm^-1)	ΔS/(μV•K^-1)
Different grown temperature	45 Pa	760℃	0.387	315	1.2	672	36.73	18.30	1.23×10⁸	0.2185
		790℃	0.394	338	2.3	1100	42.85	25.67	1.05×10⁸	0.4190
		820℃	0.391	341	1.8	284	35.21	8.07	1.28×10⁸	0.0680
Different oxygen pressure	790 ℃	15 Pa	0.388	349	1.2	374	26.97	13.87	1.67×10⁸	0.0896
		45 Pa	0.394	338	2.3	1100	42.85	25.67	1.05×10⁸	0.4190
		75 Pa	0.392	358	2.4	416	29.70	14.01	1.52×10⁸	0.1095

Growth condition	c/nm	T_p/K	TCR/%	U_P/mV	τ /ns	F_m/(mV•ns^-1)	?_ZT/(K•cm^-1)	ΔS/(μV•K^-1)
Different grown temperature	45 Pa	760℃	0.387	315	1.2	672	36.73	18.30	1.23×10⁸	0.2185
		790℃	0.394	338	2.3	1100	42.85	25.67	1.05×10⁸	0.4190
		820℃	0.391	341	1.8	284	35.21	8.07	1.28×10⁸	0.0680
Different oxygen pressure	790 ℃	15 Pa	0.388	349	1.2	374	26.97	13.87	1.67×10⁸	0.0896
		45 Pa	0.394	338	2.3	1100	42.85	25.67	1.05×10⁸	0.4190
		75 Pa	0.392	358	2.4	416	29.70	14.01	1.52×10⁸	0.1095

Influence of Growth Temperature and Oxygen Pressure on Laser-induced Voltage Effect of La_0.67Sr_0.33MnO₃:Ag_0.08Thin Films

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