Influence of Deposition and in situ Annealing Time on Composition and Optical Band Gap of h-BN Films Deposited by PECVD

doi:10.3724/SP.J.1077.2014.13549

Abstract

Abstract:

Series of h-BN films were grown by RF plasma enhanced chemical vapor deposition (PECVD) technique using high purity nitrogen and diborane as the precursor gases. The optimized experimental conditions for preparing h-BN films were explored. Based on these explorations, influences of deposition time and in situ annealing time on the composition and optical band gap of the films were investigated. All specimens were characterized by Fourier transform infrared spectroscope, utraviolet-visible spectrophotometer and field emission scanning electron microscope. The results show that the deposition time has a significant impact on the quality and optical band gap of the samples, and the optical band gap exhibits an exponential relation with the varied thickness of the films. Moreover, in situ annealing at 700℃ can affect the crystal quality, but almost not the phase and optical band gap of the h-BN films.

Key words: h-BN films, deposition time, annealing time, optical band gap

CLC Number:

TB34

QIN Yi, ZHAO Ting, WANG Bo, YANG Jian-Feng. Influence of Deposition and in situ Annealing Time on Composition and Optical Band Gap of h-BN Films Deposited by PECVD[J]. Journal of Inorganic Materials, 2014, 29(7): 729-734.

Figures/Tables 5

Table1 Preliminary deposition conditions for the BN films

No	T_s/℃	P/W	R	D_t/min
1^#	300	20	2	30
2^#	300	60	4	30
3^#	300	100	8	30
4^#	500	20	4	30
5^#	500	60	8	30
6^#	500	100	2	30
7^#	700	20	8	30
8^#	700	60	2	30
9^#	700	100	4	30

Fig.1 FTIR spectra of samples deposited at preliminary conditions

Fig. 2 Cross-section SEM image of the h-BN films The inset shows the results of line scanning by EDX in the film near the BN/Si interface

Fig. 3 FTIR spectra of the samples prepared with different Dt (a), I1380, I780 and I1380/ I780 as a function of Dt (b), FTIR spectra of the samples prepared with different At ( Dt=70 min) (c) depos-ited under conditions of sample 7#

Fig. 4 Surface morphologies of the samples treated at different At(a, b, c) and surface morphology of the sample etched by 5vol% HF (d) ( Dt=70 min) Inset in (d) is morphology of the particle near the BN/Si interface

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