Controllable Synthesis of One-dimensional β-SiAlON Materials

doi:10.3724/SP.J.1077.2014.13559

Abstract

Abstract:

β-SiAlON whiskers, belts and rods were prepared at 1650-1850 K in N₂ atmosphere, respectively, by using Si, Al and Al₂O₃ powders as raw materials which were pressed into cuboid and burying in Si₃N₄ grains. The effects of growth conditions on the controllable synthesis of one-dimensional β-SiAlON preparation were investigated in detail, and their growth mechanisms were explored according to the thermodynamic calculations. The results showed that one-dimensional β-SiAlON could be controllably synthesized only by adjusting sintering temperatures. Specifically, β-SiAlON whiskers with 200-400 nm in diameter and 100-1000 in aspect ratio could be obtained at 1650 K. Increasing growth temperature from 1700 K to 1800 K, β-SiAlON belts with thickness of about 200 nm, width of 1-4 μm and length-width ratio in the range of 10-20, were produced. Further increasing temperature to 1850 K, β-Sialon rods were synthesized accordingly. Vapor-solid (VS) growth mechanism was put forward to elucidate the growth of one-dimensional β-SiAlON based on their thermodynamic calculations and microstructures.

Key words: one-dimensional β-SiAlON material, controllable synthesis, growth mechanisms, thermodynamics

CLC Number:

TQ175

PENG Ben, QIU Gui-Bo, YUE Chang-Sheng, ZHANG Mei, GUO Ming. Controllable Synthesis of One-dimensional β-SiAlON Materials[J]. Journal of Inorganic Materials, 2014, 29(7): 706-710.

Figures/Tables 4

Fig. 1 XRD patterns of the samples prepared at different tem-p-eratares

Fig. 2 High resolution TEM image (a) and EDS pattern (b) of β-SiAlON whisker (S1)

Fig. 3 FESEM images of one-dimensional β-SiAlON materials grown on the surface at different temperatures (a) 1650 K (S1); (b) 1700 K (S2); (c) 1750 K (S3); (d) 1800 K (S4); (e) 1850 K (S5)

Fig. 5 Ratio of β-SiAlON XRD characteristic diffraction peaks intensity I210 and I200 vs growth temperature

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