A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

doi:10.3724/SP.J.1077.2014.14032

Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (5): 557-560.DOI: 10.3724/SP.J.1077.2014.14032

• Research Letter • Previous Articles

A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

HUANG Chang-Bao, NI You-Bao, WU Hai-Xin, WANG Zhen-You, CHENG Xu-Dong, XIAO Rui-Chun

(Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China)

Received:2014-01-14 Revised:2014-01-28 Published:2014-05-20 Online:2014-04-24
About author:HUANG Chang-Bao (1985-), candidate of PhD. E-mail: tantalus6036@gmail.com
Supported by:
National Natural Science Foundation of China (51202250); Knowledge Innovation Program of the Chinese Academy of Sciences (13J131211)

Abstract

Abstract: As growing ε-GaSe single crystal, volatile component and curving solidification interface spoil the qualities of crystals. The GaSe single crystal in Φ19 mm×65 mm size was grown by modified vertical Bridgman method. The crystallinity and optical properties of as-grown crystals were measured by XRD and transmission spectra, respectively. The FT-IR measurements indicated wide transparency over the spectral range (0.65-16 μm) and low absorption coefficient (<0.3 cm^-1) in grown GaSe crystal.

Key words: Bridgman technique, nonlinear optical crystal, solidification interface

CLC Number:

TQ174

HUANG Chang-Bao, NI You-Bao, WU Hai-Xin, WANG Zhen-You, CHENG Xu-Dong, XIAO Rui-Chun. A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal[J]. Journal of Inorganic Materials, 2014, 29(5): 557-560.

References

[1] ALLAKHVERDIEV K R, YETIS M -, -ZBEK S, et al. Effective nonlinear GaSe crystal: optical properties and applications. Laser Physics, 2009, 19(5): 1092-1104.

[2] FINSTERBUSCH K, BAYER A, ZACHARIAS H. Tunable, narrow- band picosecond radiation in the mid-infrared by difference frequency mixing in GaSe and CdSe. Applied Physics B, 2004, 79(4): 457-462.

[3] SHI W, DING Y J, MU X D, et al. Tunable and coherent nanosecond radiation in the range of 2.7–28.7 mm based on difference- frequency generation in gallium selenide. Applied Physics Letters, 2002, 80(21): 3889-3891.

[4] ANDREEV Y M, ATUCHIN V V, LANSKII G V, et al. Growth, real structure and applications of GaSe1-xSx crystals. Materials Science and Engineering B, 2006, 128(1/2/3): 205-210.

[5] SARKISOV S Y, ATUCHIN V V, GAVRILOVA T А, et al. Growth and optical parameters of GaSe: Te crystal. Russian Physics Journal, 2010, 53(4): 346-352.

[6] ATUCHIN V V, BEISEL N F, KOKH K A, et al. Growth and microstructure of heterogeneous crystal GaSe: InS. Crystal Engineering Communication, 2013, 15: 1365-1369.

[7] WEI J A, ZHANG H, ZHANG H. Suppression of melt convection in a proposed Bridgman crystal growth system.-International Journal of Heat and Mass Transfer, 2009, 52(15/16): 3747-3756.

[8] SINGH N B, SUHRE D R, BALAKRISHNA V, et al. Far infrared conversion materials: gallium selenide for far infrared conversion applications. Progress in Crystal Growth and Characterization of Materials, 1998, 37(1): 47-102.

[9] KOLESNIKOV N N, BORISENKO E B, BORISENKO D N, et al. Influence of growth conditions on microstructure and properties of GaSe crystals. Journal of Crystal Growth, 2007, 300(2): 294-298.

[10] ONAI T, NAGAI Y, DEZAKI H, et al. Liquid phase growth of bulk GaSe crystal implemented with the temperature difference method under controlled vapor pressure. Journal of Crystal Growth, 2013, 380: 18-22.

[11] NI Y B, WU H X, HUANG C B, et al. Growth and quality of gallium selenide (GaSe) crystals. Journal of Crystal Growth, 2013, 381: 10-14.

[12] LEE H, PEARLSTEIN A J. Interface shape and thermally-driven convection in vertical Bridgman growth of gallium selenide: a semiconductor with anisotropic solid-phase thermal conductivity. Journal of Heat Transfer, 2001, 123(4): 729-740.

[13] TOCHITSKY S Y, PETUKHOV V O, GOROBETS V A, et al. Efficient continuous-wave frequency doubling of a tunable CO2 laser in AgGaSe2. Applied Optics, 1997, 36(9): 1882-1888.

A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

RichHTML

PDF (PC)

Knowledge

Cited

Abstract

Cite this article

share this article

References

Related Articles 6

Recommended Articles

Metrics

Comments

[1]	CHEN Qiao-Ling, LUO Min, LIN Chen-Sheng. Synthesis, Characterization and Property of a New UV Nonlinear Optical Crystal KNa₅Ca₅(CO₃)₈ [J]. Journal of Inorganic Materials, 2018, 33(6): 667-672.
[2]	ZHANG Guo-Dong, LI Chun-Long, WANG Shan-Peng, ZHANG Xiang, ZHANG Xi-Xia, TAO Xu-Tang. Investigations on Optical Scatter Particles during CdSiP₂ Crystals Growth [J]. Journal of Inorganic Materials, 2014, 29(8): 855-858.
[3]	LI Xin-Hua,XU Jia-Yue,SHEN Hui,LI Xiao-Min. Novel Approach to Grow ZnO Bulk Crystals [J]. Journal of Inorganic Materials, 2007, 22(1): 21-24.
[4]	XU Jia-Yue,FAN Shi-Ji,HUA Wang-Xiang. Bridgman Growth of 4-Inch-Diameter Li₂B₄O₇ Single Crystals [J]. Journal of Inorganic Materials, 2002, 17(4): 857-861.
[5]	LUO Jun,ZHONG Zhen-Wu,FAN Shi-Ji,WANG Jin-Chang. Progress of Research on New Nonlinear Optical Crystals Ca₄RO(BO₃)₃ [J]. Journal of Inorganic Materials, 2000, 15(1): 1-8.
[6]	XU Jia-Yue,SUN Ren-Ying,LIN Ya-Fang,FAN Shi-Ji,XU Xue-Wu. Growth of Potassium Lithium Niobate Single Crystal [J]. Journal of Inorganic Materials, 1998, 13(4): 589-592.