Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (5): 493-497.DOI: 10.3724/SP.J.1077.2014.13396

• Research Paper • Previous Articles     Next Articles

Effect of Hydrogen and Cu Interlayer on the Optical and Electrical Properties of GZO Thin Film

LV Kun, ZHU Bai-Lin, LI Ke, HU Wen-Chao, XIE Ming, WU Jun   

  1. (Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China)
  • Received:2013-08-07 Revised:2013-09-22 Published:2014-05-20 Online:2014-04-24
  • About author:LV Kun.
  • Supported by:

    The Open Project of High Performance Ceramics and Superfine Structure of National Key Laboratory(SKL201110SIC)

Abstract: By method of magnetron sputtering, GZO thin films were deposited in H2+Ar atmosphere and GZO/Cu/GZO thin films were deposited in Ar atmosphere. Effects of H2 flux and Cu interlayer thickness on the optical and electrical properties of the films were investigated, respectively. Furthermore, GZO/Cu/GZO films were also deposited in H2+Ar and the properties of films were investigated as a function of Cu interlayer thickness. The results show that introduction of H2 into deposition atmosphere can effectively decrease the resistivity and enhance the transmittance of GZO films. The best figure of merit is obtained for the films deposited at H2 flux of 20 sccm. With increasing Cu interlayer thickness, both the resistivity and transmittance of the GZO/Cu/GZO multilayer film are decreased. After introducing H2 into deposition atmosphere, the transmittance of GZO/Cu/GZO multilayer film is remarkably decreased although its resistivity is further decreased with increasing Cu interlayer thickness. In addition, it is found that the energy gap (Eg) of the films increases with H2 flux increasing, while it decreases with Cu interlayer thickness increasing.

Key words: GZO thin film, multilayer film, hydrogen doping, transparent conductive film, optical and electrical property

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