Effects of H3PO4 Treated Porous SiO2 on Proton Conductivity and Performances of EDL-TFTs

doi:10.3724/SP.J.1077.2014.13404

Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (5): 482-486.DOI: 10.3724/SP.J.1077.2014.13404

• Research Paper • Previous Articles Next Articles

Effects of H₃PO₄ Treated Porous SiO₂ on Proton Conductivity and Performances of EDL-TFTs

WAN Xiang^1,2, LIU Yang-Hui¹, ZHANG Hong-Liang¹

(1. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; 2. Nano Science and Technology, University of Science and Technology of China, Suzhou 215123, China)

Received:2013-08-07 Revised:2013-10-30 Published:2014-05-20 Online:2014-04-24
About author:WAN Xiang. E-mail: wanxiang@nimte.ac.cn
Supported by:
National Natural Science Foundation of China (51302276, 51102187); Postdoctoral Research Preferred Funds (BSH1302050)

Abstract

Abstract: Porous SiO₂ films were deposited by plasma enhanced chemical vapor deposition and were treated by H₃PO₄ solution with various concentrations. Then indium-zinc-oxide (IZO) electric-double-layer thin-film transistors (EDL- TFTs) were fabricated by using such porous SiO₂ films as the gate dielectrics. The effects of H₃PO₄ treatments on the proton conductivity and EDL capacitance of porous SiO₂ films and on the performances of EDL-TFTs were investigated systematically. The proton conductivity and EDL capacitance of SiO₂ films increase with the H₃PO₄ concentration increase. A high proton conductivity of 1.51×10^-4 S/cm and a large EDL capacitance of 6.33 μF/cm² are obtained for porous SiO₂ films which were treated with 60% H₃PO₄ solution. The operating voltage decreases and the on/off ratio increases with the increasing H₃PO₄ concentration. The EDL-TFTs gated by porous SiO₂ films treated with 60% H₃PO₄ solution show the best performance with a low operating voltage of 1.2 V, a high mobility of 20 cm²/(V·s), and a large on/off ratio of 4×10⁶. Such EDL-TFTs are promising for biosensors and chemical sensors in the future.

Key words: electric-double-layer, thin-film-transistors, H₃PO₄ treatment, porous SiO₂

CLC Number:

TN321

WAN Xiang, LIU Yang-Hui, ZHANG Hong-Liang. Effects of H₃PO₄ Treated Porous SiO₂ on Proton Conductivity and Performances of EDL-TFTs[J]. Journal of Inorganic Materials, 2014, 29(5): 482-486.

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Effects of H₃PO₄ Treated Porous SiO₂ on Proton Conductivity and Performances of EDL-TFTs

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