Recent Progress on Bismuth Layer-structured Ferroelectrics

doi:10.3724/SP.J.1077.2014.13669

Abstract

Abstract: As an improtant lead-free ferroelectric/piezoelectric system, the past few decades have attracted increasing attention of bismuth layer structured-ferroelectrics (BLSF) due to its comprehensive advantages in the areas of high temperature, high frequency and ferroelectric random access memory (FRAM). In this paper, the recent progresses on the study of this system were reviewed. Firstly, as the basic of other researches, the key issues in strucutre design and microstructure study were dicussed in detail. Then special emphasis was put on ferroelectric/ piezoelectric performance and film technology. Additionally, some new research fields that were closely related to ferroelectric were introduced. In the end, the research directions were also extracted according to the authors’ knowledge.

Key words: bismuth layered structure, ferroelectric, lead-free piezoelectric, ferroelectric random access memory, review

CLC Number:

TQ174

ZHANG Fa-Qiang, LI Yong-Xiang. Recent Progress on Bismuth Layer-structured Ferroelectrics[J]. Journal of Inorganic Materials, 2014, 29(5): 449-460.

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