Research Progress on Growth Rate Controlling of Atomic Layer Deposition

doi:10.3724/SP.J.1077.2014.13449

Abstract

Abstract: Based on the self-limiting nature of sequential surface chemical reaction, atomic layer deposition (ALD) technique could grow films layer by layer. ALD has advantages of low growth temperature, precise thickness controllability, good conformity and uniformity. Therefore, it becomes a primary method for preparing thin films. As a key indicator of ALD technique, the growth rate of film plays an important role not only on the film quality and density, but also on the integrated circuit production efficiency. This paper reviews the recent research results of the ALD growth mechanism and rate, and the factors that affect the growth rate. Finally, this paper provides a summary and some research trends on improving and optimizing the ALD growth rate.

Key words: atomic layer deposition, growth rate, growth mechanism, steric hindrance

CLC Number:

TQ174

LU Wei-Er, DONG Ya-Bin, LI Chao-Bo, XIA Yang, LI Nan. Research Progress on Growth Rate Controlling of Atomic Layer Deposition[J]. Journal of Inorganic Materials, 2014, 29(4): 345-351.

References

[1] NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306(5696): 666–669.

[2] RITALA M, LESKELA M. Atomic layer epitaxy a valuable tool for nanotechnology? Nanotechnology, 1999, 10(1): 19–24.

[3] TAMMENMAA M, KOSKINEN T, HILTUNEN L, et al. Zinc chalcogenide thin films growth by the atomic layer epitaxy technique using zinc acetate as source material. Thin Solid Films, 1985, 124(2): 125–128.

[4] BEDAIR S M. Atomic layer epitaxy deposition processes. J. Vac. Sci. Technol. B, 1994(1): 179–185.

[5] RITALA M, LESKELA M, DEKKER J P, et al. Perfectly conformal TiN and Al2O3 films deposited by atomic layer deposition. Chem. Vap. Deposition, 1999, 5(1): 7–9.

[6] MOROZOV S A, MALKOV A A, MALYGIN A A, et al. Interaction of titanium tetrachloride with products of thermal decomposition of basic magnesium carbonate. Russ. J. Appl. Chem., 2003, 76(1): 7–9.

[7] RITALA M, LESKEL? M, NIINIST? L, et al. Titanium isopropoxide as a precursor in atomic layer epitaxy of titanium dioxide thin films. Chem. Mater., 1993, 5(8): 1174–1181.

[8] SUNTOLA. T. Atomic layer epitaxy. Thin Solid Films, 1992, 216(1): 84–89.

[9] ASIKAINEN T, RITALA M, LESKELA R, et al. AFM and STM studies on In2O3 and ITO thin films deposited by atomic layer epitaxy. Appl. Surf. Sci., 1996, 99(2): 91–98.

[10] LIM J, SHIN K, KIM H, et al. Enhancement of ZnO nucleation in ZnO epitaxy by atomic layer epitaxy. Thin Solid films, 2005, 475(1): 256–261.

[11] YOUSFI E B, FOUACHE J, LINCOT D. Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry. Appl. Surf. Sci., 2000, 153(4): 223–234.

[12] AHN C H, WOO C H, HWANG S Y, et al. Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition. Surface and Interface Analysis, 2010, 42(6/7): 955–958.

[13] PUURUNEN R L, VANDERVORST W. Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: growth mode modeling and transmission electron microscopy. J. Appl. Phys., 2004, 96(9): 4878–4889.

[14] FONG D, EASTMAN J, KIM S. In situ synchrotron X-ray characterization of ZnO atomic layer deposition. Appl. Phys. Lett., 2010, 97(19): 191904–1–3.

[15] PUURUNEN R L. Correlation between the growth-per-cycle and the surfacen hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water. Appl. Surf. Sci., 2005, 245(1–4): 6–10.

[16] PUURUNEN R L, LINDBLAD M, ROOT A, et al. Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina. Phys. Chem. Chem. Phys., 2001, 3(6): 1093–1102.

[17] PUURUNEN R L. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process. J. Appl. Phys., 2005, 97(12): 121301–1–3.

[18] RITALA M, LESKEL? M, RAUHALA E. Atomic layer epitaxy growth of titanium dioxide thin films from titanium ethoxide. Chem. Mater.,1994, 6(4): 556–561.

[19] YLILAMMI M. Monolayer thickness in atomic layer deposition. Thin Solid Films, 1996, 279(1/2): 124–130.

[20] SIIMON H, AARIK J. Thickness profiles of thin films caused by secondary reactions in flow-type atomic layer deposition reactors. J. Phys. D, 1997, 30(12): 1725–1728.

[21] PUURUNEN R L. Growth per cycle in atomic layer deposition: a theoretical model. Chem. Vap. Depos., 2003, 9(5): 249–257.

[22] KUKLI K, RITALA M, LESKEL? M, et al. Atomic layer deposition of hafnium dioxide films from 1-Methoxy-2-methyl-2-propanolate complex of hafnium. Chem. Mater., 2003, 15(8): 1722–1727.

[23] HAUKKA S, LAKOMAA E L, ROOT A. An IR and NMR study of the chemisorption of TiCl4 on silica. J. Phys. Chem., 1993, 97(19): 5085–5094.

[24] KYT?KIVI A, LAKOMAA E L, ROOT A, et al. Sequential saturating reactions of ZrCl4 and H2O vapors in the modification of silica and- alumina with ZrO2. Langmuir, 1997, 13(10): 2717–2725.

[25] HUANG H W, CHANG W C, LIN S J, et al. Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment. J. Appl. Phys., 2012, 112(12): 124102–1–7.

[26] PUURUNEN R L, ROOT A, HAUKKA S, et al. IR and NMR study of the chemisorption of ammonia on trimethylaluminum- modified silica. J. Phys. Chem. B, 2000, 104(28): 6599–6609.

[27] PUURUNEN R L, ROOT A, SARV P, et al. Growth of aluminum nitride on porous alumina and silica through separate saturated gas-solid reactions of trimethylaluminum and ammonia. Chem. Mater., 2002, 14(2): 720–729.

[28] RAUTIAINEN A, LINDBLAD M, BACKMAN L B, et al. Preparation of silica-supported cobalt catalysts through chemisorption of cobalt(II) and cobalt(III) acetylacetonate. Phys. Chem. Chem. Phys., 2002, 4(11): 2466–2472.

[29] LIM J M, SHIN K, KIM H, et al. Enhancement of ZnO nucleation in ZnO epitaxy by atomic layer epitaxy. Thin Solid Films, 2005, 475(1): 256–261.

[30] ZHOU M, CHEN T, TAN J J, et al. ALD Growth of Ru on RIE-pretreated TaN substrate. Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference, 2006: 330–332.

[31] KIM S H, HWANG E S, KIM B M, et al. Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4. Electrochemical and Solid-State Letters, 2005, 8(10): C155–C159.

[32] MAKINO H, KISHIMOTO S, YAMADA T, et al. Effects of surface pretreatment on growth of ZnO on glass substrate. Phys. Stat. Sol. (a), 2008, 205(8): 1971–1974.

[33] STREHLE S, SCHUMACHER H, SCHMIDT D, et al. Effect of wet chemical substrate pretreatment on the growth behavior of Ta(N) films deposited by thermal ALD. Microelectronic Engineering, 2008, 85(10): 2064–2067.

[34] XU M, XU C H, DING S J, et al. Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate. J. Appl. Phys., 2006, 99(7): 074109.

[35] KIM S K, HWANG G W, KIM W D, et al. Transformation of the crystalline structure of an ALD TiO2 film on a Ru electrode by O3 pretreatment. Electrochemical and Solid-State Letters, 2006, 9(1): F5–F7.

[36] KIM W H, MAENG W J, MOON K J, et al. Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition. Thin Solid Films, 2010, 519(1): 362–366.

[37] FANG Q, HODSON C, XU C G, et al. Nucleation and growth of platinum films on high-k/metal gate materials by remote plasma and thermal ALD. Physics Procedia, 2012, 32: 551–560.

[38] ILLIBERI A, ROOZEBOOM F, POODT P. Spatial atomic layer deposition of zinc oxide thin films. ACS Appl. Mater. Interfaces, 2012, 4(1): 268–272.