NiO-doped CaCu3Ti4O12 Thin Film by Sol-Gel Method

doi:10.3724/SP.J.1077.2013.13113

Abstract

Abstract: Pure CaCu₃Ti₄O₁₂ (CCTO) thin film and NiO-doped CaCu_3-xNi_xTi₄O₁₂ (CCNTO) thin film with x=0.10, 0.20 and 0.30 were prepared by Sol-Gel method. The effects of NiO on the dielectric properties and microstructure revolution of CCTO were studied. The crystalline structure and the surface morphology of the films were markedly influenced by NiO content. AFM images of the CaCu_3-xNi_xTi₄O₁₂ samples showed that the grain size of Ni-doped CCTO was smaller than the grain size of CCTO without Ni doping. For the CCNTO thin film(x=0.2), the lowest leakage current was obtained and the minimum value reached 0.564 mA. Meanwhile, the highest threshold voltage and nonlinear coefficient were 81 V/mm and 1.9, respectively. The dielectric constant increased when the doping content of Ni reached a certain level. Besides, the dielectric loss was decreased firstly, and then increased.

Key words: CaCu₃Ti₄O₁₂, Sol-Gel, electrical properties, microstructure

CLC Number:

TQ174

XU Dong,SONG Qi, ZHANG Ke, XU Hong-Xing, YANG Yong-Tao, YU Ren-Hong. NiO-doped CaCu₃Ti₄O₁₂ Thin Film by Sol-Gel Method[J]. Journal of Inorganic Materials, 2013, 28(11): 1270-1274.

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NiO-doped CaCu₃Ti₄O₁₂ Thin Film by Sol-Gel Method

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