Defect Optical and Scintillation Properties of Lu2Si2O7:Ce Single Crystal Grown by Floating Zone Method

doi:10.3724/SP.J.1077.2013.12599

Journal of Inorganic Materials ›› 2013, Vol. 28 ›› Issue (8): 891-895.DOI: 10.3724/SP.J.1077.2013.12599

• Research Paper • Previous Articles Next Articles

Defect Optical and Scintillation Properties of Lu₂Si₂O₇:Ce Single Crystal Grown by Floating Zone Method

FENG He¹, REN Guo-Hao², DING Dong-Zhou², LI Huan-Ying², XU Jun², YANG Qiu-Hong¹, XU Jia-Yue³

1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072,China;
2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
3. School of Material Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China

Received:2012-10-08 Revised:2012-11-25 Published:2013-08-20 Online:2013-07-15
Supported by:
National Natural Science Foundation of China (51171239); 973 Program(2011CB612310); Shanghai Science Key Fund (11JC1412400)

Abstract

Abstract: Floating zone (Fz) method was employed to grow the Lu₂Si₂O₇ (LPS):0.5%Ce single crystal. The crack, defect, optical and scintillation properties of LPS:Ce were studied. The electron probe microanalysis (EPMA), transmittance spectrum, X-ray excited luminescence (XEL) spectra, photoluminescence spectra and decay curves (from 77 K to 500 K) were recorded. The cleavage and thermal stress cracks are detected in the as-grown crystal. Two kinds of inclusions are found through the EPMA: one is [Si₃O₉]^6- and anion radicals and the other is the excess SiO₂. Part of Ce³⁺ in the LPS:Ce sample was oxidized into Ce⁴⁺ in the air growth atmosphere. Fz grown LPS:0.5%Ce sample presents high luminescence efficiency, which is 32000 ph/MeV. As the temperature increases, the photoluminescence curves move towards the longer wavelength direction and broaden, leading to the increasing self-absorption. The rollover point of the decay time locates at 450 K, indicating that the LPS:Ce scintillator is a kind of high performance scintillator which can be applied in the high temperature environment.

Key words: Lu₂Si₂O₇：Ce, floating zone method, single crystal, defects, scintillation properties

CLC Number:

O734

FENG He, REN Guo-Hao, DING Dong-Zhou, LI Huan-Ying, XU Jun, YANG Qiu-Hong, XU Jia-Yue. Defect Optical and Scintillation Properties of Lu₂Si₂O₇:Ce Single Crystal Grown by Floating Zone Method[J]. Journal of Inorganic Materials, 2013, 28(8): 891-895.

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Defect Optical and Scintillation Properties of Lu₂Si₂O₇:Ce Single Crystal Grown by Floating Zone Method

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