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Journal of Inorganic Materials

Journal of Inorganic Materials ›› 2013, Vol. 28 ›› Issue (8): 869-874.DOI: 10.3724/SP.J.1077.2013.12550

• Research Paper • Previous Articles     Next Articles

Research for Patterned Sapphire Substrates of GaN-based LEDs

LI Cheng-Cheng1, XU Zhi-Mou1, SUN Tang-You1, WANG Zhi-Hao1, WANG Shuang-Bao1, ZHANG Xue-Ming1, PENG Jing2   

  1. (1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; 2. College of Sciences, Wuhan University of Science and Technology, Wuhan 430081, China)
  • Received:2012-09-11 Revised:2013-01-25 Published:2013-08-20 Online:2013-07-15
  • About author:LI Cheng-Cheng. E-mail:lcc1011@163.com
  • Supported by:

    National Natural Science Foundation of China(61076042; 60607006); Special Project on Development of national key scientific instruments and equipment of China(2011YQ16000205); National High Technology Research and Development Program of China (863 Program)(2011AA03A106); Huazhong University of Science and Technology Fund(HUST:2011TS119)

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Abstract: Patterned Sapphire Substrate (PSS) which can reduce the density of threading dislocation and enhance the effect of scattering is widely used to fabricate high-power Light-Emitting-Diode (LED) chip. In this paper, the finite- difference time-domain (FDTD) method was used to simulate and analyze the light extraction efficiency (LEE) of GaN-based micro-scale and nano-scale patterned sapphire substrates LED. The results show that the nano-patterned sapphire substrate (NPSS) has a significantly better LEE than that of micro-patterned sapphire substrate (MPSS). And in NPSS, the LEE of the pillar structure improveed 96.6% comparing to other nano-patterned structures. Large areas of table-like nano-sapphire patterned substrates are successfully prepared through soft embossing technology. The photoluminescence (PL) of the LED grown on table-like nano-sapphire patterned substrates is 8 times stronger than that of the LED grown on the unpatterned sapphire wafers.

Key words: GaN-based LED, FDTD, patterned sapphire substrates, nano-imprint

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