Research of the Preparation Technology for the SiC Whisker

doi:10.3724/SP.J.1077.2013.12503

Journal of Inorganic Materials ›› 2013, Vol. 28 ›› Issue (7): 757-762.DOI: 10.3724/SP.J.1077.2013.12503

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Research of the Preparation Technology for the SiC Whisker

CHEN Yang^1,2, WANG Cheng-Guo², GAO Ran-Ran², ZHU Bo²

(1. Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China; 2. Carbon Fiber Engineering Research Center, Faculty of Materials Science, Shandong University, Jinan 250061, China)

Received:2012-08-17 Revised:2012-10-17 Published:2013-07-20 Online:2013-06-19
About author:CHEN Yang. E-mail: chenyang@mail.sdu.edu.cn
Supported by:
National Basic Research Program of China (2011CB605601); 863 High-Tech Program (2009AA035301); Shandong University Graduate Student Independent Innovation Fund (yzc12075)

Abstract

Abstract: SiC whiskers were prepared on graphite matrix using common and low-cost hydrogen silicone oil (H-PSO) as raw material, and the influence of different process parameters on the growth of SiC whisker was studied based on the crystallization fraction using orthogonal test method. The process parameters include heat treatment temperature (T), holding time (t), flow of protective atmosphere (f) and porosity of matrix (P). The morphology and structural characteristics of SiC whisker were also analyzed by SEM, TEM, RAMAN and XRD. The results show that the temperature is the most important factor that influences the growth of SiC whisker, followed by gas flow, porosity, holding time in proper sequence. The bigger gas flow in safe range makes generation reaction of SiC whisker sufficient, and smaller porosity benefits SiC crystal nucleus to grow up. Higher temperature and longer time are favorable to whisker continued growth. The SiC whisker is of core-shell structure with SiC phase as core and silicon oxide as the shell.

Key words: graphite materials, SiC whisker, crystallization fraction, orthogonal test method

CLC Number:

TB33

CHEN Yang, WANG Cheng-Guo, GAO Ran-Ran, ZHU Bo. Research of the Preparation Technology for the SiC Whisker[J]. Journal of Inorganic Materials, 2013, 28(7): 757-762.

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Research of the Preparation Technology for the SiC Whisker

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