Performances of GaN-based LEDs with AZO Films as Transparent Electrodes

doi:10.3724/SP.J.1077.2013.12482

Journal of Inorganic Materials ›› 2013, Vol. 28 ›› Issue (06): 649-652.DOI: 10.3724/SP.J.1077.2013.12482

• Research Paper • Previous Articles Next Articles

Performances of GaN-based LEDs with AZO Films as Transparent Electrodes

CHEN Dan¹, LÜ Jian-Guo¹, HUANG Jing-Yun¹, JIN Yu-Zhe², ZHANG Hao-Xiang², YE Zhi-Zhen¹

(1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; 2. Hangzhou Silan Azure Co., Ltd., Hangzhou 310018, China)

Received:2012-08-05 Revised:2012-09-12 Published:2013-06-20 Online:2013-05-20
About author:CHEN Dan. E-mail: wjfjs2cd@163.com
Supported by:
National Natural Science Foundation of China (51172204, 51002131); Research Funds of Education Department of Zhejiang Province (2010R50020)

Abstract

Abstract: Al-doped ZnO (AZO) thin films were prepared by pulsed laser deposition under different oxygen pressures. AZO films with highly transparent conductive properties were obtained at 0.1 Pa. AZO films were used on GaN-based light-emitting diodes (LEDs) as transparent contact layers. At a forward current of 20 mA, the 520 nm electroluminescence peak was evidently observed, with a high working voltage of 10 V. The brightness of the chip was enhanced as the forward current increased. Secondary ion mass spectra revealed that the high working voltage of the LED might be triggered by the change of material conductivity and the passivation layer formed at the AZO/GaN interface.

Key words: AZO thin films, GaN-based LEDs, transparent electrodes, pulsed laser deposition

CLC Number:

O482
TN301

CHEN Dan, Lü Jian-Guo, HUANG Jing-Yun, JIN Yu-Zhe, ZHANG Hao-Xiang, YE Zhi-Zhen. Performances of GaN-based LEDs with AZO Films as Transparent Electrodes[J]. Journal of Inorganic Materials, 2013, 28(06): 649-652.

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Performances of GaN-based LEDs with AZO Films as Transparent Electrodes

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