Effects of Al2O3-doping on the Microstructure and Dielectric Properties of Ba4Sm9.33Ti18O54 Ceramics

doi:10.3724/SP.J.1077.2012.12192

Abstract

Abstract: Ba₄Sm_9.33Ti₁₈O₅₄ (BST)• xwt%Al₂O₃ (x=0–1.5) microwave dielectric ceramics were prepared by solid state reaction method. The effects of Al₂O₃ on the microstructure and dielectric properties of BST ceramics were studied. With the increasing amount of Al₂O₃, the Sm₂Ti₂O₇ phase observed in the undoped BST ceramics disappeared and new phases BaTi₄O₉ (x≥0.6) and BaAl₂Ti₅O₁₄ (x≥1.0) were found in BST ceramics successively as identified by SEM and EDS analysis. It was showed that the disappearance of Sm₂Ti₂O₇ phase and the formation of a small amount of BaTi₄O₉ phase significantly improved the Qf values of the BST ceramics, at the cost of dielectric constant. Further increasing the amount of Al₂O₃ produced more BaTi₄O₉ led to a slight decrease in Qf values. However, both the dielectric constant and Qf values were deteriorated with the appearance of BaAl₂Ti₅O₁₄. BST ceramics with 0.6wt% Al₂O₃ doped sintered at 1340℃ for 3 h obtained the best dielectric properties: ε_r=74.7, Qf =10980 GHz, τ_f = –11.8×10^-6/℃.

Key words: microwave dielectric ceramics, Ba₄Sm_9.33Ti₁₈O₅₄, Al₂O₃, dielectric properties

CLC Number:

TQ174

YAO Xiao-Gang, LIN Hui-Xing, JIANG Shao-Hu, CHEN Wei, LUO Lan. Effects of Al₂O₃-doping on the Microstructure and Dielectric Properties of Ba₄Sm_9.33Ti₁₈O₅₄ Ceramics[J]. Journal of Inorganic Materials, 2012, 27(12): 1266-1270.

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Effects of Al₂O₃-doping on the Microstructure and Dielectric Properties of Ba₄Sm_9.33Ti₁₈O₅₄ Ceramics

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