Abstract: Ti:sapphire crystal is of great value in the domain of modern science and technology application. But growth of large Ti:sapphire crystals with a homogeneous titanium distribution and good optical quality is still a challenge. Carbon-doped Ti:sapphire crystal was grown by the Kyropoulos technique. The present work shows that by the utilization of KY growth technology, it is possible to grow carbon-doped Ti:sapphre, with 180 mm in diameter and 30 kg in weight, without macroscopic defects such as cracking. As-grown large crystals show high chemical homogeneities and the figure of merit is above 200, The study has the important practical significance of grown large Ti:Sapphire crystal with low infrared absorption loss and high figure of merit.

Key words: kyropoulos technique, carbon doped, Ti:sapphire laser crystal