Journal of Inorganic Materials ›› 2012, Vol. 27 ›› Issue (11): 1211-1215.DOI: 10.3724/SP.J.1077.2012.12027

• Research Paper • Previous Articles     Next Articles

Electroluminescent Characteristics of CdSe Colloidal Quantum Dots

LOU Teng-Gang1, HU Lian1, WU Dong-Kai1, DU Ling-Xiao1, CAI Chun-Feng1, SI Jian-Xiao2, WU Hui-Zhen1   

  1. (1. Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China; 2. Department of physics, Zhejiang Normal University, Jinhua 321004, China)
  • Received:2012-01-06 Revised:2012-03-31 Published:2012-11-20 Online:2012-10-25
  • About author:LOU Teng-Gang. E-mail: zju_loutg@zju.edu.cn
  • Supported by:

    National Natural Science Foundation of China (10974174, 91021020); National Natural Science Foundation of Zhejiang province (Z6100117, Y1110563)

Abstract: Electroluminescent (EL) devices with an ITO/ZnS/CdSe/ZnS/Al structure were fabricated using chemically synthesized colloidal CdSe quantum dots (QDs) as active layer. The size of the CdSe QDs is about 4.3 nm measured by a transmission electron microscope. Scanning electron microscope characterization shows smooth surfaces of ZnS layers and Al electrodes. CdSe (111) and ZnS (111) diffraction peaks are observed in the X-ray diffraction patterns, verifying the incorporation of CdSe QDs and ZnS insulator materials in the devices. Room temperature photoluminescence (PL) spectra reveal that the CdSe QDs’ emission peak is located at 614 nm. EL measurements at room temperature show a broad emission band ranging from 450 nm to 850 nm with a peak wavelength located at about 800 nm. Finally, the light emitting mechanism for the EL devices is proposed and the discrepancy between PL and EL spectra is interpreted.

Key words: CdSe, quantum dots, electroluminescence, photoluminescence

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