Journal of Inorganic Materials ›› 2012, Vol. 27 ›› Issue (11): 1205-1210.DOI: 10.3724/SP.J.1077.2012.12015

• Research Paper • Previous Articles     Next Articles

Growth and Photoluminescence of ZnO and Zn1-xMgxO Nanorods by High-pressure Pusled Laser Deposition

ZHANG Peng1, WANG Pei-Ji1, CAO Bing-Qiang1,2   

  1. (1. School of Physics and Technology, University of Jinan, Jinan 250022, China; 2. School of Material Science and Engineering, University of Jinan, Jinan 200050, China)
  • Received:2012-01-05 Revised:2012-03-02 Published:2012-11-20 Online:2012-10-25
  • About author:ZHANG Peng. E-mail: ujnzp@163.com
  • Supported by:

    National Natural Science Foundation of China (51002065; 11174112); Taishan Scholar Foundation of Shandong (TSHW20091007); Program for New Century Excellent Talents in University, MOE of China

Abstract: The influence of the experimental parameters such as temperature, target, and thickness of catalyst layer on the growth of nanorods were systemically studied by a newly designed and home-built high-pressure pulsed laser deposition Zn1-xMgxO (PLD). The growth mechanism and photoluminescence properties of ZnO and Zn1-xMgxO nanorods were also investigated. It was found that c-orientated ZnO nanorod arrays grown on silicon substrate were obtained when the growth temperature was 925℃ and the thickness of gold catalyst layer was 2 nm. It was also proved that growth temperature and catalyst layer thickness were both crucial for the diameter and growth density of ZnO nanorods. A combination of vapor-liquid-solid (VLS) and vapor-solid (VS) mechanism was proposed to describe the growth of ZnO nanorods by high-pressure PLD. Zn1-xMgxO nanorods and nanobelts with random orientation were grown by doping the ZnO target with MgO. The bandgap of ZnO was effectively expanded together with defect-related levels formation in the forbidden gap, which also induced enhancement of visible peak emission.

Key words: high pressure PLD, Zn1-xMgxO, growth mechanism, photoluminescence

CLC Number: