Preparation and Characterization of Co-Se Thin Films by Electrodeposition

doi:10.3724/SP.J.1077.2011.00403

Abstract

Abstract: Cobalt selenide thin films were prepared onto tin oxide-coated glass substrates by electrodeposition method. The electrochemical mechanisms for this thin film formation were investigated by cyclic voltammetry (CV), and the results show that cobalt selenide compound phases are formed via either surface induced reduction by predeposited selenium or directly reaction with H₂Se from six electron reduction of H₂SeO₃. It is also found that films’ stoichiometry and morphology are significantly influenced by deposition potential, deposition temperature and pH value. Se-rich CoSe thin films with hexagonal crystal structure and compact morphology can be obtained at deposition potential of - 0.5V ( vs SCE), deposition temperature of 50 ℃ and pH value of 2.0. The electrodeposited CoSe film shows an optical absorption coefficient of higher than 1 × 10⁵ cm ^-¹, and an optical band gap of (1.53±0.01) eV which is close to the theoretical optimization value of the light absorption layer materials in single-junction solar cell.

Key words: CoSe thin films, cyclic voltammetry, under potential deposition, band gap, solar cells

CLC Number:

TM615

WANG Bo,LIU Fang-Yang,LI Ji e,LAI Yan-Qing,ZHANG Zhi-An,LIU Ye-Xiang. Preparation and Characterization of Co-Se Thin Films by Electrodeposition[J]. Journal of Inorganic Materials, 2011, 26(4): 403-410.

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