Study of Deep Bulk Traps of Low-Temperature-Sintered SrTiO3 GBBL Capacitors

Abstract

Abstract: A deep bulk trap level of SrTiO₃ grain boundary barrier layer (GBBL) capacitor material was found to be at about 0.21eV below its
conduction band by means of admittance spectroscopy. With temperature increasing from --150 to 10℃, the ε_eff protrusion and then the conspicuous dispersity of dielectric constant
were observed and explained. In terms of a combination of paraelectric behaviour of SrTiO₃ and a deep bulk trap effect, an equivalent circuit model involving the
deep bulk level was given. Based on the model, a reasonable cosistency of calculated dielctric constants with experimental data was revealed.

Key words: SrTiO₃, GBBL capacitor, dielectric constant, deep bulk trap

CLC Number:

TM534

LI Zheng,WANG Ping-Chu,XU Bac--Min,YIN Zhi-Wen. Study of Deep Bulk Traps of Low-Temperature-Sintered SrTiO₃ GBBL Capacitors[J]. Journal of Inorganic Materials.

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Study of Deep Bulk Traps of Low-Temperature-Sintered SrTiO₃ GBBL Capacitors

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