Journal of Inorganic Materials

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Studies on the Chemical Mechanism of BaxSrl-xTiO3 Ferroelectric Thin Films by Sol-Gel Method

JIN Cheng-Yu1; DING Yong-Ping2; MENG Zhong-Yan 1   

  1. l. Department of Material Science; Shanghai University; Shanghai 201800; Chinal 2. Department of Material Science; Shanghai Jiaotong University; Shanghai 200030; China
  • Received:1999-05-14 Revised:1999-06-28 Published:2000-04-20 Online:2000-04-20

Abstract: FTIR analysis combined with DSC, XRD and AFM experiments was used to study on the chemical mechanism of thermal evolution for BaxSr1-xTiO3 (BST) thin films derived by sol-gel method. Acetylacetone(HAcAc) was introduced as a chelating agent to reduce a rapid hydrolysis rate of Ti-alkoxide, to improve its crystallization path, to decrease its crystallization temperature. And then the densified and crack-free BST thin films with better crystallization were fabricated.

Key words: BST thin films, sol-gel method, FTIR, DSC, XRD, AFM

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