BST Patterned Films Prepared by Direct Patterning Process and Their Properties

doi:10.3724/SP.J.1077.2008.00886

Abstract

Abstract: The ultraviolet light photosensitive Ba_0.8Sr_0.2TiO₃ (BST) sol and gel films were prepared by using chemical modification and modified sol-gel process with polyvinylpyrrolidone (PVP) as crack-suppressing agent, and acetylacetone (AcAcH) as chemical modifier agent which can associate metal-salt to form coordination chelate. The BST patterned gel films were prepared by irect patterning process. Then the BST patterned films with perovskite structure on Pt/TiO₂/SiO₂/Si substrate were obtained after subsequent heat treatment. The thickness of the BST patterned film is about 793nm, the dielectric constant and dielectric loss of the BST patterned film are about 600 and 0.03, respectively.

Key words: BST Thin Film, photosensitivity, fine patterning, sol-gel process

CLC Number:

TN104
TN305

ZHANG Wei-Hua,YUAN Yuan,SHI Chun-Mei,ZHAO Gao-Yang. BST Patterned Films Prepared by Direct Patterning Process and Their Properties[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.00886.

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BST Patterned Films Prepared by Direct Patterning Process and Their Properties

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