Journal of Inorganic Materials

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Effects of V5+ Substitution on the Dielectric Properties of Mg(SbNb1-xV xO9 Ceramics

YAO Guo-Guang1, LIU Peng2   

  1. 1. Department of Applied Mathematics and Physics, Xian Institute of Posts and Telecommunications, Xi’an 710021, China; 2. College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, China
  • Received:2007-12-03 Revised:2008-01-18 Published:2008-09-20 Online:2008-09-20

Abstract: The effects of V5+ substitution on the sintering characters, microstructure and microwave dielectric properties of Mg4(SbNb1-xVxO9 ceramics were investigated. Results show that a small amount of V5+ substitution for Nb5+ can lower the sintering temperature of Mg4(Nb2-xSbx)O9 drastically. In all composition range investigated, the sintered ceramics show single phase with corundum structure. With increasing of V5+ content, the dielectric constant (ε) and quality factor (Q·f) increase and thereafter decrease, respectively, the temperature coefficient of resonant frequencies τ f decreases which is due to the strengthened B site-bond valence caused by V5+ substitution. The ceramics with x=0.15 sintered at 1250℃ has a relative dielectric constant εr of 9.98, a quality factor Q·f value of 20248GHz (at 8GHz) and a temperature coefficient of resonant frequencies τ f value of --23.3×10-6K-1.

Key words: microwave dielectric ceramics, Mg4(SbNb1-xVx)O9, dielectric properties

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