Development of High-K Gate Dielectric Materials

doi:10.3724/SP.J.1077.2008.00865

Abstract

Abstract:
The traditional gate dielectric material of SiO₂ can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and obtained great progress. In this paper, the developments of high gate materials were reviewed. Based on the authors background and research work in the area, the latest achievements of high-K gate dielectric materials on the recrystalization temperature, the low-K interface layer, and the dielectric breakdown and metal gate electrode were introduced in detail.

Key words: high-K gate dielectrics, recrystallization temperature, lowK interface layer, metal gate

CLC Number:

WU De-Qi,ZHAO Hong-Sheng,YAO Jin-Cheng,ZHANG Dong-Yan,CHANG Ai-Min. Development of High-K Gate Dielectric Materials[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.00865.

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