Thermodynamic Analysis and CVT Growth of ZnSe Single Crystal

doi:10.3724/SP.J.1077.2008.00855

Abstract

Abstract: The thermodynamic properties of transporting reactions in ZnSe-I₂, -H₂, -HCl and -NH₄Cl chemical vapor transport systems were analyzed by solving sets of equations with numerical methods. The results show that ZnSe-NH₄Cl system has the properties of high total pressure and moderate reaction enthalpy change. The hydrogen (H₂) produced through decomposition of NH₃ is capable to adjust the transporting component partial pressure of H₂Se. Referring to the component partial pressure in ZnSe-I₂system, the process parameters in ZnSe-NH₄Cl system are primarily selected for ZnSe single crystal growth. The concentration of NH₄Cl ranges from 0.5 to 1.0mg/mL at the growth temperature of about 1000℃. An as-grown ZnSe single crystal is obtained
with dimension of 8mm×6mm×4mm. The full width at half maximum of X-ray double crystals rocking curve on (111) as-grown surface is 60.48’’ and the etching pits density (EPD) is about (4.5--5.0)×10⁴/cm².

Key words: zinc selenide, chemical vapor transporting reaction, thermodynamic analysis

CLC Number:

LIU Chang-You,JIE Wan-Qi. Thermodynamic Analysis and CVT Growth of ZnSe Single Crystal[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.00855.

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