Journal of Inorganic Materials

• Research Paper • Previous Articles     Next Articles

Nano-SiC Ceramic Sintering at Ultra-high Pressure and High Temperature

XIE Mao-Lin1, LUO De-Li1, XIAN Xiao-Bin1, LENG Bang-Yi1, XIE Dong-Hua1, LU Wei-Yuan2
  

  1. (1. China Academy of Engineering Physics, Mianyang 621900, China; 2. Sichuan Ultra-hard Material Ltd.Co., Jiangyou 621700, China)
  • Received:2007-08-23 Revised:2007-12-25 Published:2008-07-20 Online:2008-07-20

Abstract: High-density SiC ceramics doped with 2wt% Al2O3 additives were fabricated by ultra-high
pressure and high temperature technique (4.5GPa,1250℃,20min). The structures, grain size, lattice parameters, chemical component, morphology and mechanical property of the sintered SiC ceramics were characterized by X-ray diffraction
(XRD), X-ray photoelectron energy spectroscope (XPS), scanning electron microscope (SEM), energy dispersive X-ray
spectroscope (EDX) and nano impress indenter. The results show that nano-SiC ceramic is fully densified by ultra-high
pressure technique at relative low temperature (1250±50℃). No phase transfer or holes is found in the sintered nano-SiC
ceramic. The hardness and elastic modulus of the sintered SiC ceramic with grain size of 22nm and lattice parameters of 0.4355nm are 33.7GPa and 407GPa, respectively.

Key words: ultra-high pressure, sinter, silicon carbide, alumina

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