Effects of In Dopant Concentration on the Electrical Properties of CdZnTe Crystal

doi:10.3724/SP.J.1077.2008.00195

Abstract

Abstract: CdZnTe crystal was grown with different In dopant concentration in excess Te atmosphere. The relation between In dopant concentration and resistivity, carrier concentration, mobility of the CdZnTe crystal was investigated. In addition, In-doped compensation mechanism in CdZnTe crystal was also discussed. Results show that the high resistivity of CdZnTe crystal obtained is 1.89×10¹⁰Ω· cm when the In dopant concentration is at the level of 5×10¹⁷cm^-3.

Key words: nuclear detector, CdZnTe, In doping, electrical properties

CLC Number:

TN304

YUAN Zheng,SANG Wen-Bin,QIAN Yong-Biao,LIU Hong-Tao,MIN Jia-Hua,TENG Jian-Yong. Effects of In Dopant Concentration on the Electrical Properties of CdZnTe Crystal[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.00195.

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Effects of In Dopant Concentration on the Electrical Properties of CdZnTe Crystal

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