Effect of TiO2 Seeding Layer on Crystalline Orientation and Ferroelectric Properties of Bi 3.15 Nd 0.85 Ti 3 O 12 Thin Films

doi:10.3724/SP.J.1077.2007.01192

Abstract

Abstract: Bi_3.15 Nd _0.85 Ti ₃ O ₁₂ (BNT) thin films with and without a TiO₂ seeding layer were fabricated on Pt/Ti/SiO₂/Si substrates by sol-gel method at 750℃. The effect of seeding layer on structural and electrical properties of BNT thin films was investigated. X-ray diffraction pattern shows that the BNT thin film deposited directly on Pt/Ti/SiO₂/Si substrate exhibits predominantly (117) and (001) orientation while the BNT thin film grow on Pt/Ti/SiO₂/Si substrate with a TiO₂ seeding layer show a highly a axis orientation with the (200) strongest peak. The BNT thin film with a TiO₂ seeding layer is a more dense and homogeneous than that deposite directly on Pt/Ti/SiO₂/Si substrate. The P_r and E_c values of BNT films with and without TiO₂ layer are 43.6 and 26μC/cm², and 91 and 80.5kV/cm, respectively. The fatigue test exhibits a very strong fatigue endurance up to 109 cycles for both films. The addition of TiO₂ seeding layer does not decrease the fatigue characteristic of BNT thin film. The leakage current density are generally in the order of 10^-6-10^-5 A/cm2 for both samples.

Key words: sol-gel, Bi _3.15 Nd _0.85 Ti ₃ O ₁₂, ferroelectric thin film, TiO₂ seeding layer

CLC Number:

TM223

LI Jia,YU Jun,PENG Gang,WANG Yun-Bo,ZHOU Wen-Li. Effect of TiO₂ Seeding Layer on Crystalline Orientation and Ferroelectric Properties of Bi _3.15 Nd _0.85 Ti₃ O ₁₂ Thin Films[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2007.01192.

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Effect of TiO₂ Seeding Layer on Crystalline Orientation and Ferroelectric Properties of Bi _3.15 Nd _0.85 Ti₃ O ₁₂ Thin Films

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