Influence of Annealing on Electron Field Emission from AlN Films Prepared by RF Reactive Sputtering

Journal of Inorganic Materials

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Influence of Annealing on Electron Field Emission from AlN Films Prepared by RF Reactive Sputtering

SHAO Le-Xi¹; LIU Xiao-Ping¹; XIE Er-Qing²; HE De-Yan²; CHEN Guang-Hua ³

1.Department of Physics; Zhanjiang Normal College; Zhanjiang 524048; China; 2.School of Physics Science and Technology; Lanzhou University; Lanzhou 730000, China; 3.School of Material Science and Engineering, Beijing Polytechnic University, Beijing 100022, China

Received:2000-08-07 Revised:2000-10-09 Published:2001-09-20 Online:2001-09-20

Abstract

Abstract: Aluminium nitride(AlN) thin films were deposited by RF reactive sputtering and characterized with XPS and XRD. The influence of thermal
annealing on the electron field emission characteristics of the AlN coating on Si substrate was investigated. The results show that the
annealing treatment of the films is a prefer approach to improve the emission stability and has a remarkable effect on the turn-on voltage
and hysteresis of the emission. It is suggested that the mechanism of these effects could be attributed to that the variation of emission properties of the films may arise from the change of surface electron
affinity and conductivity due to the change of impurities and defects density in the films during annealing treatment at various temperatures.

Key words: AlN film, electron field emission, annealing, hysteresis

CLC Number:

O414

SHAO Le-Xi,LIU Xiao-Ping,XIE Er-Qing,HE De-Yan,CHEN Guang-Hua. Influence of Annealing on Electron Field Emission from AlN Films Prepared by RF Reactive Sputtering[J]. Journal of Inorganic Materials.

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Influence of Annealing on Electron Field Emission from AlN Films Prepared by RF Reactive Sputtering

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