Imprint Properties of Yttrium Modified PZT Thin Films

QIU Ping-Sun; LUO Wei-Gen; DING Ai-Li

Laboratory of Inorganic Materials; chinese Academy of Sciences; Shanghai 200050; China

Received:2000-08-22 Revised:2000-10-12 Published:2001-09-20 Online:2001-09-20

CLC Number:

QIU Ping-Sun,LUO Wei-Gen,DING Ai-Li. Imprint Properties of Yttrium Modified PZT Thin Films[J]. Journal of Inorganic Materials.

[1]	WANG Dong-Sheng,YU Tao,HU An，WU Di,LI Ai-Dong，LIU Zhi-Guo. Effect of Forming Gas on Properties of SrBi₂Ta₂O₉ Ferroelectric Thin Film and Powder [J]. Journal of Inorganic Materials, 2009, 24(4): 737-740.
[2]	WANG Hua. c-axis Oriented Growth and Electrical Properties of Bi₄Ti₃O₁₂ Thin Films Deposited on p-Si [J]. Journal of Inorganic Materials, 2004, 19(5): 1093-1098.
[3]	LI Jin-Long,LI Yan-Rong,ZHANG Ying,DENG Xin-Wu,LIU Xing-Zhao. Epitaxial Layer-by-Layer Growth of BST Series Ferroelectric Thin Films at Low Temperature [J]. Journal of Inorganic Materials, 2004, 19(5): 1207-1211.
[4]	WANG Hua. Hysteresis Loops Characteristics of Bi₄Ti₃O₁₂ Ferroelectric Thin Films with Different Configuration on Si Substrates [J]. Journal of Inorganic Materials, 2004, 19(1): 153-158.

PDF (PC)